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Thin films of CuInTe 2 were grown by flash evaporation. The influence of the substrate temperature T s during film deposition on the properties of the thin films was examined. CuInTe 2 films were structurally characterized by the grazing incidence x-ray diffraction (GIXD) technique. Investigation by this technique demonstrates that the surface of thin films of CuInTe 2 prepared by flash evaporation at T s ≥ 100 • C exhibits the chalcopyrite structure with additional binary compounds in the surface. However, in the volume the films exhibit the chalcopyrite structure only; no foreign phases were observed. X-ray reflectometry was utilized to evaluate the critical reflection angle β c of CuInTe 2 (β CuInTe2 c ≈ 0.32 •) which permitted us to calculate the density of the films to be ρ ≈ 6 g cm −3. The evaporated films were p type and the films deposited at T s = 100 • C had a resistivity in the range 0.3-2 cm. From optical measurements we have determined the optical energy gap E g ≈ 0.94 eV and the effective reduced mass m * r ≈ 0.07m e .

Stable CdS thin films were prepared by radio frequency sputtering onto glass substrates from a CdS target (purity 4N). The as-grown films were thermally annealed under vacuum at 100 and 150 C. The effect of the annealing temperatures on the structural and optical properties of the films was investigated. Grazing incidence X-ray diffraction (GIXD) studies show that the CdS films annealed at 150 C were continuous and homogeneous as opposed to the as-deposited and the films annealed at 100 C.

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