Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

Frewin, C. L.; Locke, Christopher; Wang, J.; Spagnol, Priscila; Saddow, Stephen E.

doi:10.1016/j.jcrysgro.2009.06.037

Cited by 15 publications

(11 citation statements)

References 10 publications

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“…Unfortunately it can not help in reducing the thermal stresses. Complaint substrates have been investigated using porous Si buffer layers [8], nano-grooved surfaces [9], and recent work has focused on growing 3C-SiC on oxide layers to provide strain relief [10]. One method used in our reactor to achieve a more uniform film thickness is to mechanically rotate the wafer by 180° and continue the growth.…”

Section: Discussionmentioning

confidence: 99%

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

et al. 2008

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Having superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applications. Growing 3C-SiC films on Si is challenging, as there is a large mismatch in lattice parameter and thermal expansion between the SiC film and the Si substrate that needs to be accommodated, and results in high residual stress. Residual stress control is critical in MEMS devices as upon feature release it results in substantial deformation.3C-SiC single crystalline films were deposited on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was so high that it fractured on the (111) Si wafer. The resulting film thickness on the (100) Si wafer was non-uniform, having a linear profile along the growth direction. This presented a challenge of using the substrate curvature method for calculating residual stress. Finite Element Method correction was applied to the Stoney's formula for calculating the residual stress along the wafer radius. Suggestions for reducing the amount of residual stress are made.

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Section: Discussionmentioning

confidence: 99%

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

et al. 2008

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“…6,7 A high-quality 3C-SiC epitaxial growth process was used to reduce the defect density in the growing layer and to improve its crystalline quality. 8 The entire deposition consisted of two different steps, namely carbonization followed by growth. During carbonization, propane (C 3 H 8 ) and hydrogen (H 2 ) flow through the reactor, while the temperature is ramped to 1135°C at a process pressure of ;400 Torr.…”

Section: Methodsmentioning

confidence: 99%

“…This process was used for the three 3C-SiC films grown on (100) Si substrates 9 at 2.45, 3.21, 4 lm/h of growth rate measured at the wafer center. The FTIR measurements show that, due to the lack of wafer rotation during film growth, the sample thickness varied between 2.3 lm (center) and 2.5 lm (edge) across the 50-mm wafer diameter in a direction [110], parallel to the main flat (transverse to the flow direction), while the thickness varied between 3.3 lm (upstream) and 2.2 lm (downstream) along a direction [1][2][3][4][5][6][7][8][9][10] perpendicular to the main flat (flow direction).…”

Section: Methodsmentioning

confidence: 99%

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

et al. 2012

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To understand the impact that the growth rate has on the residual stress of chemical vapor deposition-grown 3C-SiC heteroepitaxial films on Si substrates, growth experiments were performed. The film thickness was held constant at ;2.5 lm independent of the growth rate so as to allow for direct film comparison as a function of the growth rate. Stress analysis performed by profilometer curvature measurement, livqo-Raman shift analysis and micro-machined freestanding structures, show an apparent disagreement about the stress nature. This incongruity between the experimental data can be explained assuming a strong stress field located in the substrate related to defects generated in the silicon during the growth process.

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“…The (100) orientation was chosen for its crystal properties and the (100) Si allows a better etch selectivity for the KOH solution during the freestanding structure releasing 8, 9. A high‐quality 3C‐SiC epitaxial growth process was used to reduce the defect density in the growing layer and to improve its crystalline quality 10. The entire deposition consisted of two different steps, namely carbonization followed by growth.…”

Section: Methodsmentioning

confidence: 99%

Very low dose ion‐implantation effect on heteroepitaxial 3C‐SiC mechanical properties

Anzalone

Piluso²,

Marino

et al. 2012

Physica Status Solidi (a)

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Cubic silicon carbide (3C‐SiC) is regarded as a promising candidate for high‐power and high‐frequency devices application. In order to control and modify locally the cantilever bending, or the resonant frequency of the microstructures (as required for sensor development), the dependence of mechanical properties of 3C‐SiC film with the defect density (artificially induced by ion implantation) was investigated. Freestanding cantilevers were used to evaluate the mechanical properties and the residual stress of implanted SiC film. The microstructures were implanted with a very low dose of Si+ ions at 80 keV, using high‐voltage implantation system. The beam deflection from the initial position, the modification of fundamental resonant frequency and the micro‐Raman phonon mode maps were used to correlate the variation of Young's modulus with the induced defects.

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Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

Cited by 15 publications

References 10 publications

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Very low dose ion‐implantation effect on heteroepitaxial 3C‐SiC mechanical properties

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