Very low dose ion‐implantation effect on heteroepitaxial 3C‐SiC mechanical properties

Anzalone, Ruggero; Piluso, Nicolò; Marino, Antigone; Sciuto, Antonella; D’Arrigo, Giuseppe

doi:10.1002/pssa.201228249

Cited by 6 publications

(7 citation statements)

References 25 publications

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“…They found Young's modulus values from 217 to 425 GPa for (100) 3C-SiC films with a thickness ranging from 2.04 to 3.13 µm, confirming that Young's modulus is strictly related to the defect density and, therefore, to the film's thickness. In 2012, the same group also investigated the dependence of mechanical properties of 3C-SiC film with defect densities artificially induced by ion implantation [110]. The main conclusion of this paper was the correlation between the Young's modulus and the defects induced by the implantation step.…”

Section: Mems Devices and Mechanical Propertiesmentioning

confidence: 92%

3C-SiC — From Electronic to MEMS Devices

Michaud¹,

Portail²,

Alquier³

2015

Advanced Silicon Carbide Devices and Processing

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Since decades, silicon carbide (SiC) has been avowed as an interesting material for highpower and high-temperature applications because of its significant properties including its wide bandgap energy and high temperature stability. SiC is also professed as an ideal candidate for microsystem applications due to its excellent mechanical properties and chemical inertia, making it suitable for harsh environments. Among the 250 different SiC polytypes, only 4H, 6H and 3C-SiC are commercially available. The cubic structure, 3C-SiC, is the only one that can be grown on cheap silicon substrates. Hence, 3C-SiC is more interesting than any other polytype for reducing fabrication costs and increasing wafer diameter. This huge property has been evidenced for more than 30 years using chemical vapor deposition. Despite this key achievement and the growing interest for silicon carbide, no 3C-SiC-based devices can be found on the market whereas 4H-SiCbased devices are more and more largely commercialized. Even so, important headways have been reached for electrical and microelectromechanical systems (MEMS) applications. Therefore, the purpose of this chapter is to address concerns related to electronic applications and MEMS fabrication of 3C-SiC-based devices, trying to give a broad overview on specific issues and challenging solutions.

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Section: Mems Devices and Mechanical Propertiesmentioning

confidence: 92%

3C-SiC — From Electronic to MEMS Devices

Michaud¹,

Portail²,

Alquier³

2015

Advanced Silicon Carbide Devices and Processing

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“…Typically, for the calculation of the stress values of the heteroepitaxial films the bulk value of the Young's modulus is taken into account , but it is known from other materials that the elastic properties depend on the geometrical dimension or the film thickness . Recently, the dependence of the elastic modulus on the layer thickness and the dimension of the resonator beams were obtained . All this investigation indicates a reduced Young's modulus, which might lead to an overestimation of the stress in the films or devices if bulk values of the Young's modulus are used.…”

Section: Introductionmentioning

confidence: 87%

Size effect of the silicon carbide Young's modulus

Hähnlein

Kováč

Pezoldt

2017

Phys. Status Solidi A

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A self-consistent method is used for the determination of the residual stress and the effective Young's modulus of thin 3C-SiC (111) grown on Si(111), and 3C-SiC(100) grown on Si(100). The developed method allows for the accurate determination of the stress and mechanical properties in a wide range of residual stress, only by a set of cantilevers and doubly clamped beams. The resulting thickness dependence of the effective Young's modulus is investigated and compared with different elasticity and surface relaxation models which are analysed in terms of validity in the ultrathin regime. It is shown that the decrease of the effective Young's modulus for SiC can approximately be described by surface relaxation. Other effects like the surface coverage with oxides or other phases can be neglected.Array of doubly clamped 3C-SiC(100) beams from 250 mm length down to 10 mm. The layer thickness is 43 nm.

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“…Nevertheless, it is crucial to notice that the mechanical properties of SiC, such as its high Young’s modulus or the layer internal stresses, are in such cases largely affected, and may negatively impact vibrating MEMS structures. Indeed, the Young’s modulus (E) values obtained, through MEMS (clamped beams, membranes) structures, clearly indicate that E strongly depends on a crystalline structure or orientation, thicknesses and doping type and level (by at least a factor of 3, from 120 to 500 GPa) [ 21 , 24 , 142 , 143 , 144 , 145 , 146 , 147 ]. In particular, a strong dependence of the Young’s modulus from both point defects [ 24 ] and stacking faults [ 142 ] has been reported.…”

Section: Sic Memsmentioning

confidence: 99%

“…Indeed, the Young’s modulus (E) values obtained, through MEMS (clamped beams, membranes) structures, clearly indicate that E strongly depends on a crystalline structure or orientation, thicknesses and doping type and level (by at least a factor of 3, from 120 to 500 GPa) [ 21 , 24 , 142 , 143 , 144 , 145 , 146 , 147 ]. In particular, a strong dependence of the Young’s modulus from both point defects [ 24 ] and stacking faults [ 142 ] has been reported.…”

Section: Sic Memsmentioning

confidence: 99%

“…Silicon Carbide is a suitable material for fabricating even MEMS devices [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 ], particularly when it is grown on silicon substrates, because in this case it is relatively easy to create suspended structures by removing the underlying silicon with various consolidated techniques. Moreover, the mechanical properties of epitaxially grown SiC on silicon are excellent ( Table 1 ), and this allows MEMS devices with very good performances to be obtained.…”

Section: Introductionmentioning

confidence: 99%

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Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

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Very low dose ion‐implantation effect on heteroepitaxial 3C‐SiC mechanical properties

Cited by 6 publications

References 25 publications

3C-SiC — From Electronic to MEMS Devices

3C-SiC — From Electronic to MEMS Devices

Size effect of the silicon carbide Young's modulus

Emerging SiC Applications beyond Power Electronic Devices

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