Growth of Electronic Quality Silicon Over SiO2 by Epitaxial Lateral Overgrowth Technique

Jastrzȩbski, L.; Corboy, J. F.; Pagliaro, R.

doi:10.1149/1.2123639

Cited by 25 publications

(16 citation statements)

References 2 publications

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“…36,39−42 For example, in selective epitaxy of Si, HCl has been added to the Si source gas (e.g., SiH 4 /H 2 or SiH 2 Cl 2 /H 2 ) to selectively etch Si atoms from the oxide non-growth area. 39,80 Even alternation between deposition and etching steps has been explored, 81 which more closely resembles approaches that can be used for area-selective ALD. Selective CVD of Cu on W can be achieved by selective functionalization of SiO 2 regions with chlorotrimethylsilane molecules.…”

Section: Solution: Implementation Of Correction Stepsmentioning

confidence: 99%

From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

2018

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Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

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Section: Solution: Implementation Of Correction Stepsmentioning

confidence: 99%

From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

2018

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“…The first epitaxial lateral overgrowth (ELOG) of silicon and GaAs over SiOx masks was demonstrated almost 40 years ago [1,2,3,4]. This technology was then used for GaN growth on highly mismatched substrates—sapphire [5,6,7], SiC [8], or silicon [9].…”

Section: Introductionmentioning

confidence: 99%

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Sarzynski

Grzanka

et al. 2019

Materials

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InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

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“…HCl presumably etches away every small nucleus of silicon before it can grow and coalesce with another nucleus. This technique, along with the alternation of HCl etching and silicon growth in a grow/etch series of cycles, was used for some years as a means for achieving SEG [4][5][6]. However, relatively high growth temperatures were required, and good reproducibility was difficult to achieve.…”

Section: Introductionmentioning

confidence: 99%