Growth of Fe-doped semi-insulating InP by MOCVD

Long, J.; Riggs, V. G.; Johnston, W. D.

doi:10.1016/0022-0248(84)90003-4

Cited by 103 publications

(7 citation statements)

References 13 publications

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“…In the 1980's, MBE and MOVPE techniques were used to grow Fe doped GaAs and InP insulating films [6][7][8]. For GaN-based microwave transistor applications, a highly insulating buffer layer is critical to high power operation of the device at RF frequencies.…”

Section: Introductionmentioning

confidence: 99%

On the incorporation mechanism of Fe in GaN grown by metal‐organic vapour phase epitaxy

Balmer

Soley

Simons

et al. 2006

Phys. Status Solidi (c)

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We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X-ray photo-electron spectroscopy (XPS). A model is presented which describes the SIMS concentration profiles with excellent agreement, and, it is shown that Fe incorporation into GaN occurs via a surface segregation mechanism. This model is supported by direct measurement of a highly Fe-rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux.

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Section: Introductionmentioning

confidence: 99%

On the incorporation mechanism of Fe in GaN grown by metal‐organic vapour phase epitaxy

Balmer

Soley

Simons

et al. 2006

Phys. Status Solidi (c)

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“…To determine for the electron and hole concentration as a function of temperature, we start with the charge neutrality equation 13 n+N,; =p+N;, (1) where nand p are the electron and hole concentrations, and N A-and N ; are the ionized acceptor and donor concentrations, respectively. We assume Fe is the dominant acceptor, so that for Fe concentrations greater than N D' all donors will be ionized, and the charge neutrality equation becomes…”

Section: Resultsmentioning

confidence: 99%

Metalorganic vapor-phase-epitaxial growth of Fe-doped In0.53Ga0.47As

Tell

Koren

Miller

1987

Journal of Applied Physics

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“…Intentionally doped layers can be grown using liquid (e.g., diethyl zinc for pdoping) or gaseous (e.g., hydrogen sulfide for n-doping) dopant sources. Iron-doped semi-insulating indium phosphide layers may be grown using ferrocene as a dopant 12 .…”

Section: Vapor Phase Epitaxymentioning

confidence: 99%

(Electronics and Photonics Division Award Address) Compound Semiconductor Science and Technology: A Retrospective

Buckley

2017

ECS Trans.

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From the earliest days, there has been interest in GaAs and other compound semiconductors due to higher electron mobility than silicon and suitability for optical applications. It was shown in 1962 that semiconductors such as silicon are not suitable for lasers and compound semiconductors were suggested. In the fall of 1962, several groups demonstrated semiconductor lasers under pulsed conditions at 77 K and double heterostructure (DH) laser diodes were achieved in 1970. Coinciding with major advances in fiber optics technology, this provided an enormous impetus for the development of compound semiconductor technology. Epitaxial crystal growth is a most important part of the technology. Liquid phase epitaxy was initially used but was replaced by vapor-phase and molecular beam epitaxy. MOCVD eventually became the vapor-phase technique of choice. Following a breakthrough in GaN technology in the 1990s, the impact of GaN technology is enormous and GaN-based LEDs are rapidly becoming the lighting technology of choice.

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Growth of Fe-doped semi-insulating InP by MOCVD

Cited by 103 publications

References 13 publications

On the incorporation mechanism of Fe in GaN grown by metal‐organic vapour phase epitaxy

On the incorporation mechanism of Fe in GaN grown by metal‐organic vapour phase epitaxy

Metalorganic vapor-phase-epitaxial growth of Fe-doped In0.53Ga0.47As

(Electronics and Photonics Division Award Address) Compound Semiconductor Science and Technology: A Retrospective

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