Metalorganic vapor-phase-epitaxial growth of Fe-doped In0.53Ga0.47As

Abstract

Articles you may be interested inTrimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP Appl.

Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

“…Unimplanted, undoped InGaAs grown by MOCVD is typically n-type with 10 14 -10 16 cm Ϫ3 inadvertent donors. 13 The standard practice to achieve highly resistive InGaAs is to compensate these donors with deep acceptors such as Fe or Cr, however, the highest attainable room-temperature resistivity is only on the order of thousands of ⍀ cm due to the small band gap and high intrinsic carrier concentration (n i ϳ9ϫ10 11 cm Ϫ3 at room temperature͒. Consequently, the values of R s achieved here are at the upper limit of what is achievable for undoped InGaAs.…”

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

“…While being able to use this material (at different Fe-doping concentrations) in the generation and detection of THz waves, its 2.2 kΩ cm maximum achieved dark resistivity (2.2E7 Ω/sq sheet resistance) limited its use for PC THz emitters to <3 and <15 kV/cm of DC and AC electric bias fields, respectively (at an incident optical fluence of 40 μJ/cm 2 ). We note that the maximum resistivity that can be achieved from Fe-doped InGaAs was theoretically estimated to be 4 kΩ cm [20]. The maximum THz emission power that we measured from Fe-InGaAs PC emitter was 10 μW (200 mW peak power if a THz pulse width of 0.5 ps is assumed).…”

“…In contrast, for the Fe:InGaAs wafers, a maximum in resistivity was seen. This implied that the material changed from n-type to p-type, with full compensation being obtained at~2.5 × 10 16 cm −3 Fe doping, where a maximum resistivity of~2.5 kΩ cm is observed, while noting that the maximum resistivity that could be obtained from a lattice-matched Fe:InGaAs wafer has been theoretically estimated to be 4 kΩ cm [20]. We also noticed a reversal in polarity for the THz time-domain signals emitted from the p-type and n-type Fe-InGaAs emitters which was another indication to the change of the material type.…”

Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

“…These trap sites are believed to act as midbandgap states capturing the photo-generated carriers. 15,17 In this work photomixers based on Fe-doped InGaAs and Fe-doped InGaAsP material, both grown by metal-organic vapour deposition (MOCVD), are investigated for CW THz emission for the first time. MOCVD ensures a better surface quality and more uniform doping compared to approaches such as ion irradiation.…”

“…The carrier mobility of the InGaAs wafers reported in previous works were in the range ~4001000 cm . 15,33 By calibrating the experimental arrangement with a helium-cooled germanium bolometer, we estimate the average power after accounting for the 50% duty cycle from the low doped (0.5×10 16 cm -3 )…”