Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering

Kobune, Masafumi; Fukushima, Koji; Yamaji, Toru; Tada, Hideto; Yazawa, Tetsuo; Fujisawa, Hironori; Shimizu, Masaru; Nishihata, Yasuo; Matsumura, Daiju; Мizuki, J.; Yamaguchi, H.; Kotaka, Yasutoshi; Honda, Koichiro

doi:10.1063/1.2713352

Cited by 5 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…MS has been used to grow a variety of epitaxial oxides of interest as optical waveguides, [217] light emitters, [218][219][220][221] capacitor dielectrics, [222,223] high-T c superconductors, [224][225][226][227][228] photocatalysts, [229] gas sensors, [83] ferroelectrics, [230][231][232][233] piezoelectrics, [46,234] conductive oxides, [235][236][237][238][239] gate dielectrics, [29,[240][241][242][243][244] magnetoresistive materials, [245][246][247][248][249][250][251][252][253][254][255][256][257] general purpose insulators, [258,259] magnetic insulators, [260,261...…”

Section: Magnetron Sputteringmentioning

confidence: 99%

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

2009

View full text Add to dashboard Cite

The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

show abstract

Section: Magnetron Sputteringmentioning

confidence: 99%

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

2009

View full text Add to dashboard Cite

show abstract

“…This combination of peaks has frequently been observed for many types of deposition processes. 16,18,42,[51][52][53] There are no other peaks relevant to TiO 2 and Bi 2 O 3 , such as Bi 12 TiO 12 , and Bi 2 TiO 7 . 55 Post-annealing at 450 • C sharpened both peaks, indicating improved crystallization of the film.…”

Section: Resultsmentioning

confidence: 99%

Conformal Bismuth Titanate Formation Using Supercritical Fluid Deposition

Zhao

Jung

Shimoyama

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Supercritical fluid deposition (SCFD) of a conformal and stoichiometric Bi 4 Ti 3 O 12 (BIT) bismuth titanate film was developed in this work. It was achieved by adding a bismuth (Bi) precursor, triphenylbismuth, during the deposition of TiO 2 from titanium di(ipropoxide)bis (2,2,6,6-tetramethyl-3,5-heptanedionato). Conformal deposition with high growth rate was possible. In this system, the oxygen atom-containing ligands of the Ti precursor may have acted as an oxidant for the oxygen atom-free Bi precursor to enable deposition of Bi 2 O 3 . The effect of growth temperature was investigated for the individual depositions of TiO 2 and Bi 2 O 3 at 200-350 • C. It was optimized at 300 • C to minimize the generation of carbon impurity and particles. Stoichiometric BIT with a smooth surface morphology was obtained by tuning the concentrations of the Ti and Bi precursors. A uniform thickness and composition were confirmed on trenches with an aspect ratio of 7. The as-deposited BIT film on a RuO 2 underlayer, which has the same crystal structure as BIT, crystallized in the ( 111) and ( 117) orientations. The conformal, stoichiometric, smooth and crystalline BIT film grown by our SCFD method is of interest for three-dimensional structured devices, such as ferroelectric random-access memories.

show abstract

“…For such a reason, the fabrication of the single-phase perovskite structure thus far has been difficult by lots of thin-film preparation methods such as sol-gel [3], metalorganic chemical vapor deposition (MOCVD) [4] and pulsed laser deposition (PLD) [5]. We have succeeded in the fabrication of c-axis oriented perovskite (Bi 1-x La x )(Ni 0.5 Ti 0.5 )O 3 compound films by high-temperature sputtering in accordance with the concept that when the lanthanum oxide with a large bond dissociation energy (BDE) [6,7] value of 9 eV is sputtered, a stable twelvefold coordination geometry of O 2-(LaO 12 ) is formed around the A sites, and simultaneously, Bi 3+ cation with a small ionic radius of 0.102 nm [8] is incorporated into the A site vacancies designed in advance in the perovskite crystal, as described in our previous papers [9,10]. Moreover, it was confirmed that the fabricated (Bi 0.5 La 0.5 )(Ni 0.5 Ti 0.5 )O 3 (BLNT) film exhibited apparent ferroelectricity, and had a remanent polarization (P r ) value of 12 C/cm 2 and a coercive field (E c ) value of 148 kV/cm.…”

Section: Introductionmentioning

confidence: 91%

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing

Kobune¹,

Tada²,

Oshima³

et al. 2009

KEM

Self Cite

View full text Add to dashboard Cite

After depositing amorphous (Bi0.5La0.5)(Ni0.5Ti0.5)O3 (BLNT) films on BLNT seed layer/Pt(100)/ MgO(100) substrates by room-temperature sputtering, the crystallization of the perovskite-struc- tured films has been tried by hot isostatic pressing (HIP). The samples with a single-phase perovskite structure HIP-treated at 800°C for 1 h under gas pressures of 0.51.0 MPa showed good crystallinity of  = 0.960.98 without accompanying the precipitation of the secondary phase. It was confirmed that a large root mean square roughness value of 44.2 nm for the sample HIP-treated at 800°C for 1 h under gas pressure of 0.1 MPa is due to innumerable Bi4Ti3O12-like rod-shaped grains precipitated in the film surface, based on atomic force microscopy. It is shown that the BLNT sample HIP-treated at 800°C for 1 h under gas pressure of 1.0 MPa exhibits the best hysteresis loop shape with a remanent polarization of Pr = 5 C/cm2 and a coercive field of Ec = 150 kV/cm of the six.

show abstract

Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering

Cited by 5 publications

References 21 publications

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

Conformal Bismuth Titanate Formation Using Supercritical Fluid Deposition

Structural Characteristics and Ferroelectric Properties of Bismuth-Based Compound Thin Films Crystallized by Hot Isostatic Pressing

Contact Info

Product

Resources

About