Growth of germanium sulfide by hot wire chemical vapor deposition for nonvolatile memory applications

Reso, Denis; Šilinskas, M.; Lisker, Marco; Burte, Edmund P.

doi:10.1016/j.jnoncrysol.2012.04.004

Cited by 3 publications

(1 citation statement)

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“…The band gap of GeS is in the range 1.55-1.65 eV (Makinistian & Albanesi, 2006), which matches the desired absorption range of the solar spectrum and makes it an efficient absorber of incident solar radiation. GeS is composed of more environmentally friendly elements than alternative narrow-band-gap systems containing Pb, Cd and Hg, so it possesses a low toxicity and a good thermal stability (Reso et al, 2012;Burr et al, 2008). Therefore, GeS becomes a promising low-cost alternative to conventional solar cell materials, such as CdTe,Cu(In,Ga)Se 2 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis, formation mechanism and photoelectric properties of GeS nanosheets and nanowires

Shi

Dai

2014

J Appl Cryst

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Single‐crystalline GeS nanosheets and nanowires have been selectively synthesized by simply varying the reaction conditions via a convenient wet chemical approach. The formation mechanism of the nanosheets and nanowires has been proposed. The results from time‐dependent reactions proved that the GeS nanowires were formed by a rolling‐up mechanism. Films made of as‐synthesized GeS nanosheets and nanowires were found to have an outstanding photoelectric response, suggesting their potential in solar energy applications. The structure, morphology, composition and optical absorption properties of the as‐prepared samples were characterized using X‐ray powder diffraction, transmission electron microscopy, energy‐dispersive X‐ray spectrometry and scanning electron microscopy.

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Section: Introductionmentioning

confidence: 99%