Growth of high purity liquid phase epitaxial GaAs in a silica growth system

Butcher, Kenneth; Li, Mo; Alexiev, D.; Tansley, T.L.

doi:10.1016/0022-0248(95)00297-9

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…11 However, in GaAs grown by liquid phase epitaxy ͑LPE͒, under gallium-rich conditions, oxygen behaves as a shallow donor. 12 As a result of this the deep level trap density is suppressed in LPE GaAs and the minority carrier diffusion length-a measure of material purity-can be several orders of magnitude higher than for arsenic-rich GaAs. 13 Gallium-rich GaN is easily obtained at temperatures below 750°C because below that temperature, free gallium has an extremely low desorption rate.…”

Section: Introductionmentioning

confidence: 99%

Crystal size and oxygen segregation for polycrystalline GaN

Butcher

Timmers

Afifuddin

et al. 2002

Journal of Applied Physics

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The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to have larger crystals with an increased tendency to a single-preferred crystal orientation. Elastic recoil detection analysis with heavy ions (i.e., 200 MeV Au 197 ions) was used to determine the composition of the GaN films grown for the study, including the hydrogen, carbon, gallium, nitrogen, and oxygen content. Atomic force microscopy and x-ray diffraction were used to study the sample morphology. From these measurements, the available surface area of the films was found to be sufficient for a significant proportion of the oxygen present in the films to segregate at the grain boundaries. This interpretation is consistent with earlier theoretical studies of the formation and segregation of the VGa-(ON)3 defect complex at dislocation sites in gallium-rich GaN. For this work, however, the defect complex is believed to segregate at the grain boundary of the polycrystalline GaN.

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Section: Introductionmentioning

confidence: 99%

Crystal size and oxygen segregation for polycrystalline GaN

Butcher

Timmers

Afifuddin

et al. 2002

Journal of Applied Physics

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“…Kuphal [104] concluded that the ultimate purity (n, electron carrier conc. Butcher et al [105] described techniques for high-purity GaAs LPE using a silica boat and furnace tube, and reported 200-mm thick GaAs layers with net carrier concentrations of about 10 13 cm À3 . Butcher et al [105] described techniques for high-purity GaAs LPE using a silica boat and furnace tube, and reported 200-mm thick GaAs layers with net carrier concentrations of about 10 13 cm À3 .…”

Section: High-purity Lpe Materials For Devicesmentioning

confidence: 99%