Growth of High-Quality CuGaSe2 Thin Films using Ionized Ga Precursors

Yamada, Akira; Miyazaki, Hisashi; Miyake, Takahiro; Chiba, Y.; Konagai, Makoto

doi:10.1109/wcpec.2006.279460

Cited by 3 publications

(3 citation statements)

References 9 publications

(10 reference statements)

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“…It is reported that these binary compound can be removed by etching in KCN solution or rapid annealing using hydrogen and nitrogen mixture gas. [17] Resistivity 𝜌 and carrier concentration 𝑁 𝑝 of CIGS films on PI sheet with different compositions were performed by the van der Pauw technique. [18] Film thickness was measured by stylus profiler.…”

Section: -2mentioning

confidence: 99%

Cu(In, Ga)Se ₂ Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Weilong

et al. 2009

Chinese Phys. Lett.

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The structural and electrical properties of Cu(In,Ga)Se2 (CIGS) films grown on polyimide (PI) sheet using the three-stage co-evaporation process are investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM), Raman spectra, and Hall effect measurements, respectively. The results show that the properties of CIGS films on PI sheet are strongly dependent on the compositional ratio of Cu/(In+Ga) (Cu/III). In contrast to the non-stoichiometric CIGS films, stoichiometric CIGS films show better structural and electrical properties, such as a relatively larger grain size, lower resistivity and higher carrier concentration. The flexible CIGS solar cells on PI sheet with the conversion efficiencies of 9.7% and 6.6% are demonstrated for the CIGS absorber layer with Cu/III of 0.96 and 0.76, respectively (active area, 0.20 cm 2 ). The cell efficiency for Cu-poor CIGS films is limited by a relatively lower open circuit voltage and fill factor.

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Section: -2mentioning

confidence: 99%

Cu(In, Ga)Se ₂ Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Weilong

et al. 2009

Chinese Phys. Lett.

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“…In our previous study, we have developed an ionization Ga k-cell technique for CuGaSe 2 films deposition, and also found the crystal quality was obviously improved [6]. In this paper, the ionization Ga k-cell was applied to the growth of Cu(In,Ga)Se 2 (CIGS) films with lower (Ga/III = 0.30) and higher Ga (Ga/III = 0.70) content.…”

mentioning

confidence: 99%

“…The typical structure of ionization Ga K-cell has been described elsewhere [6]. The grid ionization voltage (V c ) and filament current (I fila ) are the key parameters for the ionization of Ga atoms.…”

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confidence: 99%

Growth of Cu(In,Ga)Se₂ thin films using ionization Ga source and application for solar cells

Nishijima

Yamada

et al. 2009

Phys. Status Solidi (c)

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Cu(In,Ga)Se2(CIGS) thin films with lower (Ga/III = 0.30) and higher (Ga/III = 0.70) Ga‐content were grown onto the soda‐lime glass substrates by the co‐evaporation process using ionization Ga source. The enlargement of grain size for the as‐grown CIGS films was observed using the higher grid ionization voltage (Vc) and filament current (Ifila). XRD results revealed that the crystal quality can be improved using higher Vc and Ifila which is consistent with SEM results. Hall effect measurements showed that an obvious increasing in carrier concentration and decreasing in resistivity using higher Vc. Finally, the lower and higher Ga‐content CIGS solar cell with a promising efficiency of 15.4% and 8.27% has been achieved, respectively. Our results suggested that the high energy inherent to the ionized Ga atoms could be transferred to the substrate and played an important role for improvement of film quality like a local substrate heating sources. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Various Metal Sandwich Layer Oriented Efficiency Enhancement Superiority on CuInGaSe2 Thin Film Solar Cells

Kabilan¹,

Ravi²,

Raja³

et al. 2019

ACES

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The good quality CuInGaSe 2 (CIGS) thin film solar cells were fabricated on molybdenum metal coated soda lime glass substrate. Three-stage co-evaporation method was utilized for the fabrication of high quality p-type CIGS thin film absorber layer. Further, n-type CdS layer, high resistive intrinsic ZnO layer and transparent conducting AlZnO layers were fabricated by CBD method and vacuum sputtering methods. We made three various top metal sandwich grid patterns, i.e. Al, Al/Cu and Cu/Al which were utilized to investigate the metal sandwich layer oriented efficiency enhancement superiority on CuInGaSe 2 thin film solar cells. The investigated specific CIGS solar cell device efficiency with respect to various top metal grid sandwich patterns is presented and discussed.

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Growth of High-Quality CuGaSe2 Thin Films using Ionized Ga Precursors

Cited by 3 publications

References 9 publications

Cu(In, Ga)Se ₂ Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Cu(In, Ga)Se ₂ Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Growth of Cu(In,Ga)Se₂ thin films using ionization Ga source and application for solar cells

Various Metal Sandwich Layer Oriented Efficiency Enhancement Superiority on CuInGaSe2 Thin Film Solar Cells

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Growth of High-Quality CuGaSe2 Thin Films using Ionized Ga Precursors

Cited by 3 publications

References 9 publications

Cu(In, Ga)Se 2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Cu(In, Ga)Se 2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Growth of Cu(In,Ga)Se2 thin films using ionization Ga source and application for solar cells

Various Metal Sandwich Layer Oriented Efficiency Enhancement Superiority on CuInGaSe2 Thin Film Solar Cells

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Product

Resources

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Cu(In, Ga)Se ₂ Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Cu(In, Ga)Se ₂ Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties versus Composition

Growth of Cu(In,Ga)Se₂ thin films using ionization Ga source and application for solar cells