Growth of high quality GaN layers with AlN buffer on Si(111) substrates

Chen, P.; Zhang, R.; Zhao, Yanyan; Xi, Dongjuan; Shen, Bo; Chen, Z.Z.; Zhou, Yugang; Xie, S.; Lu, Wei; Zheng, Youdou

doi:10.1016/s0022-0248(01)00842-9

Cited by 100 publications

(45 citation statements)

References 13 publications

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“…3). Such a positive effect of an Al predeposition was also observed by Chen and co-workers who applied the predeposition to HT-AlN layers [92]. They clearly show that they have a steplike AlN surface at the optimum aluminum deposition time while short deposition lead to island growth of AlN and too long deposition to a rough AlN surface.…”

Section: Seed Layersupporting

confidence: 72%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

129

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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Section: Seed Layersupporting

confidence: 72%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

129

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“…In case of an oxidation of the Si(111) surface the only 1 nm thick oxide will totally demolish the step structure of the Si(111) surface [7]. The effect of Al pre-seeding on the growth mode of an AlN buffer layer grown on Si substrate was reported as an effective process [8]. With increasing Al pre-seeding time, the grains formed on the SiC surface were covered by Al atoms.…”

Section: Resultsmentioning

confidence: 99%

The Growth and Characterization of GaN Films Grown with Al Pre‐Seeded AlN Buffer on SiC/Si(111) Substrates

Kwon

Jeong

Shin

et al. 2002

phys. stat. sol. (c)

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PACS : 68.55.Jk; 73.61.Ey; 81.15.Gh High quality GaN layers were grown by low pressure metal organic chemical vapour deposition on Si(111) substrates using 3C-SiC intermediate layers with AlN buffer layers. The formation of silicon nitride at the surface of 3C-SiC prevents a uniform growth of the AlN buffer. To prevent the formation of silicon nitride, we introduce an Al pre-seeding before the AlN buffer layer growth. We found that the crystal quality and surface morphology of GaN films strongly depend on the Al pre-seeding time; the crystal quality and the surface morphology of the GaN films was improved with increasing Al pre-seeding time.

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“…1. The time for the Al pre-deposition was increased from 10 to 20 s in steps of 5 s. The variation of the Al pre-deposition time is known to influence the successive layers [2], but it also helps to partly disconnect the buffer layer from the Si substrate. On these buffer structures different LED structures were grown as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

MOCVD of InGaN‐based light emitting structures on silicon substrates with strain optimized buffer layers using long Al pre‐deposition

Clames¹,

Giesen²,

Meyer³

et al. 2006

Phys. Status Solidi (c)

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GaN/InGaN multi quantum wells (MQWs) were grown on silicon (Si) substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). A structure of layers consisting of AlN, AlGaN and GaN was used for subsequent deposition of the MQW structures on Si substrates. The Al pre-deposition time before growing the buffer structure and its effect on the formation of cracks was investigated. The emitted wavelength of the structure was changed by varying the thickness of the Mg-doped AlGaN electron blocking layer, by reducing the growth temperature of the MQW structure and by increasing the QW width of the structure.

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Growth of high quality GaN layers with AlN buffer on Si(111) substrates

Cited by 100 publications

References 13 publications

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

The Growth and Characterization of GaN Films Grown with Al Pre‐Seeded AlN Buffer on SiC/Si(111) Substrates

MOCVD of InGaN‐based light emitting structures on silicon substrates with strain optimized buffer layers using long Al pre‐deposition

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