Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

Lee, Jaewon; Tak, Youngjo; Kim, Jun-Youn; Hong, Hyun-Gi; Chae, Seung‐Hoon; Min, Bokki; Jeong, Hyungsu; Yoo, Ji Beom; Kim, Jong-Ryeol; Park, Young-Soo

doi:10.1016/j.jcrysgro.2010.08.006

Cited by 23 publications

(15 citation statements)

References 20 publications

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“…The work focuses on model multilayer InGaN epitaxial stacks grown on Si wafers with (111) orientation (13), due to the cost and throughput advantages that are expected to result from this materials technology when optimized to offer levels of quality (e.g., threading dislocation densities <10 9 cm −2 ) (13) currently available from material grown on conventional substrates such as sapphire or SiC. The layer configurations appear in Fig.…”

Section: Resultsmentioning

confidence: 99%

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Kim

Brueckner

Song

et al. 2011

Proc. Natl. Acad. Sci. U.S.A.

232

187

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Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.gallium nitride | solid-state lighting | transfer printing I ndium gallium nitride-based (InGaN) blue light emitting diodes (LEDs) hold a dominant position in the rapidly growing solid-state lighting industry (1, 2). The materials and designs for the active components of these devices are increasingly well developed due to widespread research focus on these aspects over the last one and a half decades. Internal and external quantum efficiencies of greater than 70% (3) and 60% (3), respectively, with luminous efficacies larger than 200 lm∕W (4) and lifetimes of >50;000 h (5) are now possible. The efficacies (i.e., 249 lm∕W), exceed those of triphosphor fluorescent lamps (i.e., 90lm∕W), thereby making this technology an appealing choice for energy-efficient lighting systems (4). In particular, electricity consumption for lighting potentially could be cut in half using solid-state lighting (2). Although there remain opportunities for further improvements in these parameters, the emergence of LEDs into a ubiquitous technology for general illumination will rely critically on cost effective techniques for integrating the active materials into device packages, interconnecting them into modules, managing the accumulation of heat during their operation, and spatially homogenizing their light output at desired levels of chromaticity. Existing commercial methods use sophisticated, high-speed tools, but which are based on conceptually old procedures that exploit robotic systems to assemble material mechanically diced from a source wafer, with collections of bulk wires, lenses, and heat sinks in millimeter-scale packages, on a device-by-device basis, followed by separa...

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Section: Resultsmentioning

confidence: 99%

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Kim

Brueckner

Song

et al. 2011

Proc. Natl. Acad. Sci. U.S.A.

232

187

View full text Add to dashboard Cite

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“…Furthermore, the increase in Al composition into the EBL will degrade the layer's crystalline quality with the generation of strain-induced defects and lead to an even stronger piezoelectric polarization field Therefore, the pulling down of the energy band will become worse, which may lead to an even lower hole-injection efficiency. [3][4][5][6][7][8] Some scientists have tried to use an InAlN EBL to suppress the electron leakage. However, the difficulty of high-quality InAlN material growth is a big challenge.…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer

Zhang

Yao

2011

Journal of Applied Physics

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In this study, the characteristics of the nitride-based blue light-emitting diode (LED) with AlGaN barriers are analyzed numerically and experimentally. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results indicate that the LED with AlGaN barriers has a better hole-injection efficiency and an enhanced carrier confinement in its active region over the conventional counterpart with GaN barriers. The results also show that the AlGaN electron-blocking layer (EBL) with a gradual variation of Al mole fraction has a significantly enhanced electron blocking capability as well as a greatly improved hole-injection efficiency. When Al0.08Ga0.92N QW barriers and the special designed EBL are used, the electroluminescence emission intensity is increased greatly by 69% at 200 A/cm2 and the efficiency droop is reduced markedly to 8.7% from 85% at 400 A/cm2 compared with those of the conventional LED.

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“…The miscibility problem of indium and gallium leads to phase separation in highcomposition InGaN, and the large lattice mismatch with the underlying GaN substrate induces more defects and dislocations compared to moderate indium 12.18 EQE variation with peak emission wavelength. A change in indium fraction in InGaN results in variation of IQE (Akita et al , 2007;Chang et al , 2003Chang et al , , 2010Chen et al , 2002;Guo et al , 2010;Kim et al , 2001;Leea et al , 2011;Liu et al , 2011;Lundin et al , 2010;Nakamura and Chichibu, 2000;Nguyen et al ., 2011;Pan et al , 2004;Sato et al , 2008;Sheu et al , 2001;Tadatomo et al , 2001;Wuu et al , 2005aWuu et al , , 2005bYamada et al , 2002;Yamamoto et al , 2010;Zhang et al , 2010Zhang et al , , 2012Zhao et al , 2011). composition (Ho and Stringfellow, 1996;Teles et al , 2000). Insertion of a low indium content InGaN layer prior to the QWs can also boost the performance of green LEDs, but the physics behind the increase in effi ciency is different from that for blue InGaN LEDs.…”

Section: Iii-nitride Visible Ledsmentioning

confidence: 99%

Nitride LEDs based on quantum wells and quantum dots

Verma¹,

Verma²,

Protasenko³

et al. 2014

Nitride Semiconductor Light-Emitting Diodes (LEDs)

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Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

Cited by 23 publications

References 20 publications

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer

Nitride LEDs based on quantum wells and quantum dots

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