Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 μm band for silicon photonics

“…GaAs layers grown on Ge/Si and GeOI substrates were shown to yield better surface smoothness and structural quality compared to those grown directly on Si. We show that the introduction of a QD layer within the GaAs buffer layer, shown to be effective in suppressing the propagation of APDs in the case of GaAs grown on GeOI in a previous work [18], yields a similar effect in the case of the Ge/Si substrate. We obtained InAs/GaAs QDs with high density and emission in the 1.3 mm band at room temperature (RT) on all substrates.…”

InAs/GaAs quantum dots on germanium‐on‐insulator‐on‐silicon substrates (GeOI) using molecular beam epitaxy

“…With the introduction of a thick (~0.9 µm) GaAs buffer and QD APD filter layer, Bordel et al [3] recently reported 1.3 µm room temperature photoluminescence (RT-PL) emission from their high density (4x10 10 cm -2 ) InAs QDs grown on GeOI. However, the InAs QDs are bimodal in size, and the PL spectra exhibit double-peak emissions at 1.3 µm and 1.19 µm.…”

“…On the other hand, due to the small lattice mismatch (~0.07%) between GaAs and Ge, researchers also investigated the growth of GaAs-based QDs on Ge virtual substrates, e.g. graded Si 1-x Ge x /Si substrates [8] and Ge-oninsulator-on-Si (GeOI) substrates [3]. The growth of GaAs on Ge is more attractive than that on Si since one can optimize the growth to produce layers without APDs [9].…”

“…GaAs-based. To realize high-speed optical interconnects for Si-based electronics, there are now increasing efforts to monolithically integrate the GaAs-based QDs on Si substrates [2][3][4]. Nevertheless, the growth of good quality GaAs on Si substrate is challenging.…”

Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

“…RECENT advancement in the active optical components research involves the use of broad gain spectrum material structure, such as as-grown and intermixed quantum-dots (QD) [1] and as-grown quantum-dash (Qdash) [2]- [4] material structure, where a broad electroluminescent linewidth were achieved for such emitters, in contrast to short linewidth QDs structures [5]- [7]. The availability of the broad gain spectrum devices is significant for broad wavelength tunability applications, such as in optical communications [8], [9], imaging [10], metrology, spectroscopy and sensing [11].…”