Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

Abstract

Linear arrays of InAs nanocrystals have been produced by metalorganic vapor phase epitaxy on scratches performed with an atomic force microscope tip along specific crystallographic directions of an ͑100͒ InP wafer. Scratches along ͗110͘ generate highly mobile defects that extend far from the scratch region along easy-glide directions. On the other hand, ͗100͘ scratches result in highly-localized plastic deformation, hardening, and possibly frictional heating. In both cases, growth of nanocrystals was observed only on the scratched areas. Random nucleation of nanocrystals is observed along ͗110͘ scratches, while linearly ordered growth occur along ͗100͘ scratches. We attribute these observations to the delocalized nature of the dislocations in the ͗110͘ case, giving the appearance of random nucleation, while highly localized crystal defects along the ͗100͘ scratch lines act as nucleation sites for the growth of linear arrays of nanocrystals.

Investigation of the morphological and fractal behavior at nanoscale of patterning lines by scratching in an atomic force microscope

“…In this study, scratches were produced in four crystallographic directions on an (001) InP surface of a tip zigzag movement, as presented elsewhere (Fonseca Filho et al, 2010). However, in our case, scratches were done just when the tip were going forward, always at the sharp face along the [011], [0–11], [001], and [0–10] directions, respectively (Almeida et al, 2012; Fonseca Filho et al, 2010). Therefore, four samples were labeled as FRE0, FRE45, FRE90, and FRE135.…”

“…, we note that regular slip lines can be seen in the perpendicular direction to the scratch line with an average separation of approximately 100 nm and 200 nm, respectively. In a previous work, FonsecaFilho et al (2010) have described the presence of regular slip lines perpendicular to the scratch line along the [011] and[0][1][2][3][4][5][6][7][8][9][10][11]. Likewise, in Figure1b,d, the scratch lines on [001] and [0-10] directions exhibit irregular cracks at the edge of the scratch Wasmer et al (2005).…”

“…Therefore, it is important to consider the morphology and uniformity of the surface parameters. It is known that nanoscale lithography on semiconductors by indentation and by scratching stimulates the selective growth of local nanostructures (Fonseca Filho et al, 2010; Fonseca‐Filho et al, 2007; Hirai & Itoh, 2004; Hyon et al, 2000; Taylor et al, 2008), and it was noted that nucleation of nanocrystals occurs due to the presence of dislocation (Fonseca Filho et al, 2007). The defects created in the local microstructure of the crystal due to a lithography process have been widely studied by cross‐section transmission electron microscopy (Caldas et al, 2011; Huang, Ponce, Caldas, Prioli, & Almeida, 2013; Ponce et al, 2009).…”

“…Therefore, it is important to consider the morphology and uniformity of the surface parameters. It is known that nanoscale lithography on semiconductors by indentation and by scratching stimulates the selective growth of local nanostructures (Fonseca Filho et al, 2010;Fonseca-Filho et al, 2007;Hirai & Itoh, 2004;Hyon et al, 2000;Taylor et al, 2008), and it was noted that nucleation of nanocrystals occurs due to the presence of dislocation .…”

The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

“…15 Dislocations have been found to be confined in a well-defined volume below the scratch, and to act as nucleation sites for growth of linear arrays of nanocrystals. 16 Some recent studies show that defects introduced by nanoindentation and nanoscratching are different in nature, 17 but the deformation mechanisms in nanoscratching have been hardly explored. We report here on a study of the structural properties related to elastic and plastic deformation resulting from nanoscratching (001) surfaces of InP crystals.…”