Plastic hardening in cubic semiconductors by nanoscratching

Abstract

The effect of scratch proximity on the resistance to plastic deformation in InP (100) crystals under low normal loads has been studied using atomic force microscopy (AFM) and transmission electron microscopy. Plastic flow has been observed for scratches performed with an atomic force microscope along ⟨110⟩ and ⟨100⟩ crystallographic directions. Plastic hardening has been determined from AFM measurements of the scratch depth and width, as a function of the distance between parallel scratches. For relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch. Significant hardening takes place for scratch separations of less than ∼80 nm. Analysis of the microstructure indicates that hardening occurs due to the interaction of dislocations generated at adjacent scratches and acting on different slip planes.

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

“…17 In contrast to nanoindentation, very little fundamental studies have been performed on nanoscratching, a technique mainly used to investigate delamination of layered materials, 18 tribological contacts, 19 or deformation and cracking processes. [20][21][22][23] The nanoscratching technique is commonly viewed as a test, which generates many incontrollable defects such as cracks and particles generation at the surface (ductile chips, brittle chips). 24,25 When controlled, scratching can be used to generate a starter crack for ensuing cleavage of semiconductors.…”

The effect of nanoscratching direction on the plastic deformation and surface morphology of InP crystals

“…Under similar conditions, interaction between parallel scratches was observed to lead to hardening for scratch separations of less than 80 nm, in this range of applied forces. 18 In order to avoid the interaction between adjacent scratches we have used a scratch separation of $700 nm. Thin lamella of the scratched semiconductor crystal were prepared in cross-section for TEM, using a focused ion beam (FIB) in a Nova 200 UHR FEG (FEI) system, for projected views along the direction of the scratch lines as shown in Fig.…”

Investigation of the morphological and fractal behavior at nanoscale of patterning lines by scratching in an atomic force microscope

“…It deforms elastically until the energy accumulated in its crystalline lattice is sufficient to promote the slip planes. Plastic hardening has been determined from AFM measurements of the scratch by Caldas et al, and they concluded that for relatively low loads, hardening is found to be independent of the crystallographic direction of the scratch (Caldas, Prioli, Almeida, Huang, & Ponce, 2011). With a diamond tip, showed that the pressure performed by the AFM tip necessary to produce plastic deformation is ~15 GPa.…”

“…It is known that nanoscale lithography on semiconductors by indentation and by scratching stimulates the selective growth of local nanostructures (Fonseca Filho et al, 2010; Fonseca‐Filho et al, 2007; Hirai & Itoh, 2004; Hyon et al, 2000; Taylor et al, 2008), and it was noted that nucleation of nanocrystals occurs due to the presence of dislocation (Fonseca Filho et al, 2007). The defects created in the local microstructure of the crystal due to a lithography process have been widely studied by cross‐section transmission electron microscopy (Caldas et al, 2011; Huang, Ponce, Caldas, Prioli, & Almeida, 2013; Ponce et al, 2009). However, these reports did not analyze in depth what happens on the nanoscale surface of the crystal.…”