Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers

Noh, Young-Kyun; Kim, Moon‐Deock; Oh, Jae Eung; Yang, Woo Chul; Kim, Young Heon

doi:10.1016/j.jcrysgro.2011.01.027

Cited by 8 publications

(5 citation statements)

References 19 publications

(20 reference statements)

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“…Then at higher temperatures, the PL peak follows the expected bandgap energy trend with temperature. This leads to the "S-shape" behavior observed in the PL peak location vs. temperature of many materials, 16,18,21,22,25 including the SLs studied here.…”

Section: Discussionmentioning

confidence: 65%

“…The second explanation for the PL peak position blue shift at low temperatures is carrier localization due to compositional variation and/or layer width fluctuations. 16,17,18,21,22,25 Local regions of slightly varying compositions create spatial perturbations in the local potential, resulting in band tails in the density of states, which confine carriers to the lowest energy levels at low temperatures. As the temperature increases, the localized carriers obtain sufficient thermal energy to escape into the extended states (SL minibands), causing the blue shift in the PL peak position.…”

Section: Discussionmentioning

confidence: 99%

“…The periods of the SLs in samples E and D are 10 Å and 20 Å greater than those of samples A, B, and C; thus the As/Sb intermixing at the interface is a smaller percentage of the total period and the resulting compositional variation has a smaller localization effect. This explains the lower delocalization temperature of 35 K for sample D as compared to 60 K for sample A.For quantum wells and SLs, spatial variation in the band gap leading to localization potentials is created by variations in the layer widths 22,25. For InAs/InAs 1-x Sb x SLs, the InAs 1-x Sb x composition and layer width variation are inseparable.…”

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confidence: 95%

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Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Steenbergen

Massengale

Ariyawansa

et al. 2016

Journal of Luminescence

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The temperature-dependent and excitation-dependent photoluminescence (PL) spectroscopy characterization of mid-wavelength infrared InAs/InAs 1-x Sb x type-II superlattices reveals evidence of carrier localization. Carrier localization is apparent in the 8 meV PL peak position blue shift from 4 K to 60 K while the peak full-width-at-half-maximum is non-monotonic, peaking at 25 K before increasing above 60 K. In addition, competition between two recombination processes is evident in the temperature-dependent behavior of the PL peak integrated intensity under low excitation conditions: the intensity decreases from 4 K to 80 K, increases from 80 K to 160 K, and decreases above 160 K. Excitation-dependent PL studies reveal the dominant recombination mechanism changes from free-tobound or donor-acceptor-like recombination to excitonic or band-to-band recombination at ~60 K. These findings suggest that carrier localization is occurring below 60 K, and the confined carriers are holes as these are unintentionally doped n-type superlattices. The localization potentials are due to variations in the InAs 1-x Sb x composition, the interfaces, and the InAs and InAs 1-x Sb x layer widths. The width of a Gaussian distribution used to describe the density of states of the band tails due to carrier localization potentials ranges from 2 meV to 4 meV. The larger energy corresponds to the smaller period superlattices, indicating the interface compositional variation is more prominent and creates larger localization potentials than in the longer period superlattices.

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Section: Discussionmentioning

confidence: 65%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 95%

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Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Steenbergen

Massengale

Ariyawansa

et al. 2016

Journal of Luminescence

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“…Luckily, improvements in epitaxial growth systems now allow researchers to overcome that complication by using various methods such as AlSb quantum dots (QDs) as a seed for a better initiation of GaSb on Si, Si substrates with miscuts to prevent antiphase domains and variable steps (superlattice, graded layers, etc.) in the buffer layer to decrease threading dislocations [5][6][7][8][9][10][11]. Although several studies have been reported up to now, the method for growing the best crystal quality GaSb epilayers on Si is not yet well defined.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy

Serincan

Arpapay

2019

Semicond. Sci. Technol.

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GaSb epilayers were grown on Si (001) using molecular beam epitaxy via AlSb quantum dots as an interfacial misfit (IMF) array between the Si substrates and GaSb epilayers. The effect of IMF array thickness, growth temperature and post annealing on the surface morphology, structural and optical properties of the GaSb on Si were investigated. Among five different IMF array thicknesses (5, 10, 20, 40 and 80 ML) that were used in this study, the best result was obtained from the sample with a 20 ML AlSb IMF array. Additionally, it was found that although the full width at half maximum (FWHM) and threading dislocation (TD) densities obtained from high resolution x-ray diffraction curves can be improved by increasing the growth temperature, a decrease in the photoluminescence (PL) signal and an increase in the surface roughness (RMS) emerged. On the other hand, the results indicate that by applying post annealing the GaSb epilayer crystal quality can be improved in terms of FWHM, TD density, PL signal or RMS depending on the post annealing temperature. By applying post annealing at 570 °C for 30 min we achieve a FWHM value of 260 arcsec for a 1 μm thick GaSb epilayer on Si (001) and improve the PL signal intensity without worsening the RMS value.

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“…9,12,18 The significant improvement in quality of various group III-Sb based compounds grown on Si or GaAs substrates using AlSb buffer layer have been reported. [19][20][21][22][23][24][25][26] Despite the common usage of AlSb as a buffer layer for growing group III-Sb based compounds, it is not thoroughly understood how the AlSb buffer layer influences the growth of GaSb epilayers. AFM and RHEED, two prevalent characterization tools for investigating the epitaxy process, are not well suited to explain the interfacial phenomena.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

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The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layers

Cited by 8 publications

References 19 publications

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−Sb type-II superlattices

Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

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