Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide Precursor

Abstract

x , have been deposited by liquid injection MOCVD using the volatile gadolinium alkoxide precursor, [Gd(mmp) 3 ] (mmp = 1-methoxy-2-methyl-2-propanolate, OCMe 2 CH 2 OMe). Carbon-free GdO x films were grown over a wide range of substrate temperatures (300±600 C) on both Si(100) and GaAs(100) substrates. X-ray diffraction (XRD) data indicated that GdO x films grown on Si(100) were amorphous at low deposition temperatures, and crystalline with a C-type structure at growth temperatures of 450 C and above. GdO x films grown on GaAs at 450 C showed a strong preferred orientation, dominated by the (222) reflection.

MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor

“…In the MOCVD data, the oxide growth rate from [Ce(mmp) 4 ] shows little sign of decrease above 600 8C. In contrast, complexes such as [La(mmp) 3 ] [16] and [Gd(mmp) 3 ] [17] show a rapid decrease in oxide growth rate above 500 8C, due to thermal depletion of the precursors on the reactor walls.…”

MOCVD and ALD of High‐k Dielectric Oxides Using Alkoxide Precursors

“…[77] Significantly, carbon was absent from all the films at the estimated AES detection limit of < 0.5 at.-%, even when the films were grown in the absence of O 2 . XRD data for Gd 2 O 3 films showed that at growth temperatures above 450°C, the GdO x films were crystalline Gd 2 O 3 with a C-type structure exhibiting a preferred (111) orientation.…”

“…The XRD data of a Gd 2 O 3 film deposited on GaAs(100) at 450°C was dominated by the (222) reflection, indicating a strong preferred orientation or even a heteroepitaxial relation with the underlying GaAs. [77] SEM images of fracture cross-sections from Gd oxide films deposited at 450/C on GaAs(001) and Si(001) substrates showed that, in both cases, the microstructure is featureless on the micrometer scale.…”

“…The same phase was observed in Gd 2 O 3 deposited at > 450°C by liquid-injection MOCVD using [Gd(mmp) 3 ]. [77] The width of the diffraction peaks is indicative of nanoscale crystalline domains. SEM images of the Gd 2 O 3 films deposited at 225°C showed a generally featureless morphology, consistent with the XRD data.…”

“…[70] Simple 3 ]/3 tetraglyme to grow oxide films of La, [73] Pr, [74,75] Nd, [76] and Gd, [77] 3 ]/3 tetraglyme to grow thin films of praseodymium oxides on Si(100) over a wide range of substrate temperatures from 250 to 600°C. [74] XRD data for PrO x films deposited between 400 and 550°C in the presence of oxygen indicated that the layers were comprised predominantly of the b-Pr 6 O 11 phase.…”