Growth of semiconducting compounds from non-stoichiometric melts

A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors

“…These facets exhibited the facet effect, trapping excess dopant (Fig. 7c) [69]. Indeed this occurs even if the dopant is not the cause of the constitutional supercooling.…”

Growth of GaxIn1−xSb bulk crystals for infrared device applications by vertical Bridgman technique

“…In addition, ampoule lowering rate was also varied from 3 to 10 mm/h. Faster lowering rate leads to greater displacement of the solid -liquid interface axial position [17,18]. Thermal equilibrium within the melt cannot be properly established, which leads to indium inclusions.…”

Progress in the melt growth of III–V compounds

“…Constitutional supercooling in crystal growth was one of the earliest phenomena studied in the growth of Ge [41,45] and InSb [46]. It only manifests itself as a problem in III-V crystals when the growth involves non-stoichiometric melts.…”