Growth of single-crystalline regions on amorphous insulating substrates by zone-melting recrystallization

Scharff, W.; Erben, J.; Aßmus, W.; Heber, M.; Hamann, C.; Weißmantel, C.; Voelskov, M.; Matthäi, J.; Kögler, R.; Klabes, R.; Wieser, E.

doi:10.1002/pssa.2210820143

Cited by 3 publications

References 13 publications

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Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

Tillack¹,

Möck²,

Banisch³

et al. 1986

phys. stat. sol. (a)

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Unseeded and seeded crystallization of thick polycrystalline silicon (up to 10 μm) on SiO2 is carried out in a zone melting process using irradiation with a halogen lamp working in the scanning mode. Recrystallization without crystallization seed results in large monocrystalline areas (up to several millimeters wide and about 10 mm long). The seeded solidification produces monocrystalline silicon (100) oriented. The results indicate as well the influence of thermal conditions and impurity distribution as the interface kinetics on the feature and crystalline quality of the recrystallized film.

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Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

Tillack¹,

Möck²,

Banisch³

et al. 1986

phys. stat. sol. (a)

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Generation and characterization of thick silicon-on-insulator films

Tillack¹,

Banisch²,

Richter³

1988

Phys. Stat. Sol. (a)

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Seeded recrystallization of thick (up to 25 pm) polycrystalline silicon on SiO, using zone melting technique provides films which contain no grain boundaries and exhibit large areas without subgrain boundaries (mm,). The results, especially the comparison of the two irradiation systems used (laser and strip heater), indicate the dominating role of the thermal gradient a t the crystallization front for the origin and arrangement of defects. The electrical properties measured a t CMOS transistors and diodes are comparable to a bulk reference preparation.Die Rekristallisation von dickem, polykristallinem Silizium auf SiO, in einem Zonenschmelzprozell fuhrt bei Verwendung eines Kristallisrttionskeimes zu Schichten, die keine Krongrenzen enthalten und ausgedehnte Gebiete ohne Kleinwinkelkorngrenzen aufweisen (mme). Die dargestellten Ergebnisse, besonders der Vergleich der Bestrahlung mit Laser und Streifenheizer, zeigen den dominierenden EinfluB des Temperaturgradienten an der Kristallisationsfront auf die Entstehung und Anordnung der Defekte. CMOS-Tramistoren und Dioden, erzeugt in den SOI-Schichten, haben mit in einkristallinen Substraten priiparierten Strukturen vergleichbare Eigenschaften.

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Artificial Epitaxy (Graphoepitaxy)

Givargizov

1991

Oriented Crystallization on Amorphous Substrates

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Growth of single-crystalline regions on amorphous insulating substrates by zone-melting recrystallization

Cited by 3 publications

References 13 publications

Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

Generation and characterization of thick silicon-on-insulator films

Artificial Epitaxy (Graphoepitaxy)

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