Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition

Pak, Sang Woo; Suh, Jooyoung; Lee, Dong Uk; Kim, Eun Kyu

doi:10.1143/jjap.51.01ad04

Cited by 4 publications

(3 citation statements)

References 19 publications

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“…Since optical transitions from and to such mid-gap states have similar magnitude to the strong direct-gap bulk transitions and correspond to visible-light energy range, the O-doping into II-VI systems is expected useful for the solar-cell application by utilizing multi-photon absorption processes. Similar band gap reductions were also observed in other II-VI systems [5][6][7][8][9].…”

Section: Introductionsupporting

confidence: 84%

First‐principles study of oxygen‐doping states in II‐VI semiconductors

Ishikawa

Nakayama

2013

Phys. Status Solidi C

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Oxygen doping into zinc‐family II‐VI semiconductors is studied by the first‐principles calculation. We found that a large band‐gap reduction occurs for ZnS and ZnSe, while there is little reduction and appears a deep level of oxygen in the band gap for ZnTe. It is shown that such difference reflects the order of energy positions of host cation (Zn) 4s‐orbital and oxygen (O) 3s‐orbital states. We also study the electronic states and stability of oxy‐gen pair. By calculating the formation energy of O pair, we found that O dopants prefer to locate isolated. This is because O atom has so small radius that the pairing pro‐motes a large elastic strain in host system, which feature is in contrast to the case of N pair in III‐V systems.

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Section: Introductionsupporting

confidence: 84%

First‐principles study of oxygen‐doping states in II‐VI semiconductors

Ishikawa

Nakayama

2013

Phys. Status Solidi C

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“…Christoph Gerhard 1* , Wolfgang Viöl 1,2 and Stephan Wieneke 1,2 *Address all correspondence to: christoph.gerhard@ist.fraunhofer.de…”

Section: Author Detailsmentioning

confidence: 99%

“…The coupling of laser irradiation and plasmas, which can be realized either at low or atmospheric pressure, has turned out to be a powerful combination for a number of different applications. For example, plasmaassisted pulsed laser deposition (PLD), which is performed in vacuum environment, allows the generation of special functional thin films [1,2]. In this context, laser-plasma coupling also offers the possibility of increasing the total efficiency of PLD processes by a reduction of the laser ablation threshold of some target materials such as tungsten due to the plasma perforation of the target surface and a subsequent laser-induced bursting of gas-filled pores [3].…”

Section: Introductionmentioning

confidence: 99%

Plasma-Enhanced Laser Materials Processing

Gerhard¹,

Viöl²,

Wieneke³

2016

Plasma Science and Technology - Progress in Physical States and Chemical Reactions

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In the last few years, the combination of laser irradiation with atmospheric pressure plasmas, also referred to as laser plasma hybrid technology, turned out to be a powerful technique for different materials processing tasks. This chapter gives an overview on this novel approach. Two methods, simultaneous and sequential laser-plasma processing, are covered. In the first case, both the plasma and the laser irradiation are applied to the substrate at the same time. Depending on the process gas and the discharge type, the plasma provides a number of species that can contribute to the laser process plasmaphysically or plasma-chemically. Sequential plasma-enhanced laser processing is based on a plasma-induced modification of essential material properties, thus improving the coupling of laser energy into the material during subsequent laser ablation. Simultaneous plasma-assisted laser processing allows increasing the efficiency of a number of different laser applications such as cleaning, microstructuring, or annealing processes. Sequential plasma-assisted laser processing is a powerful method for the processing of transparent media due to a reduction in the laser ablation threshold and an increase in the ablation rate at the same time. In this chapter, the possibilities, underlying mechanisms, performance, and limits of the introduced approaches are presented in detail.

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Optoelectronic properties and doping of magnetron sputtered highly mismatched ZnO1-xTex alloy thin films

Liu

Egbo

et al. 2021

Journal of Alloys and Compounds

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Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition

Cited by 4 publications

References 19 publications

First‐principles study of oxygen‐doping states in II‐VI semiconductors

First‐principles study of oxygen‐doping states in II‐VI semiconductors

Plasma-Enhanced Laser Materials Processing

Optoelectronic properties and doping of magnetron sputtered highly mismatched ZnO1-xTex alloy thin films

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