2007
DOI: 10.1016/j.jcrysgro.2006.12.071
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Growth of ZrC thin films by aerosol-assisted MOCVD

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Cited by 46 publications
(25 citation statements)
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“…The C 1 s region for ZrO 2 nanotubes is shown in Fig. 9c without evidence attributes to ZrC in the C 1 s region (C 1 s, 282 eV) [42], which indicates that C is a contamination induced from the nonaqueous electrolyte or during storage of the sample in air [43]. On the other hand, the F 1 s peak at 685.5 eV, as shown in Fig.…”
Section: Resultsmentioning
confidence: 91%
“…The C 1 s region for ZrO 2 nanotubes is shown in Fig. 9c without evidence attributes to ZrC in the C 1 s region (C 1 s, 282 eV) [42], which indicates that C is a contamination induced from the nonaqueous electrolyte or during storage of the sample in air [43]. On the other hand, the F 1 s peak at 685.5 eV, as shown in Fig.…”
Section: Resultsmentioning
confidence: 91%
“…There are many recent reports describing the deposition of ZrC films by a variety of physical vapor deposition (PVD) or chemical vapor deposition (CVD) based techniques [5][6][7][8][9]. It appears that is rather difficult to obtain high quality ZrC films, because the same properties that make ZrC very attractive for applications, such as high melting point (T m = 3445 8C), low sputtering or evaporation rates, together with Zr high affinity for oxygen [5,7,10,11] are rendering the deposition of thin films difficult.…”
Section: Introductionmentioning
confidence: 99%
“…There are many recent reports describing the deposition of ZrC films by a variety of physical vapor deposition (PVD) or chemical vapor deposition (CVD) based techniques [5][6][7][8][9]. It appears that is rather difficult to obtain high quality ZrC films, because the same properties that make ZrC very attractive for applications, such as high melting point (T m = 3445 8C), low sputtering or evaporation rates, together with Zr high affinity for oxygen [5,7,10,11] are rendering the deposition of thin films difficult. The pulsed laser deposition (PLD) technique, which is known to allow for a decrease of the deposition temperature with respect to other techniques while preserving the high quality of the grown films [12,13], has been successfully employed to deposit ZrC films [14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…Precursor solutions were subjected to ultrasonic nebulization, which resulted in small droplets with controlled size [19]. The feed rate of the solution was 4 mL/h (0.067 sccm) and the total amount of solution was 10 mL [20]. Hydrogen (99.999% purity) was used as carrier gas [20].…”
Section: Methodsmentioning
confidence: 99%
“…The feed rate of the solution was 4 mL/h (0.067 sccm) and the total amount of solution was 10 mL [20]. Hydrogen (99.999% purity) was used as carrier gas [20].…”
Section: Methodsmentioning
confidence: 99%