Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy

Zakharov, N. D.; Werner, P.; Gerth, G.; Schubert, Luise; Соколов, Л. В.; Gösele, U.

doi:10.1016/j.jcrysgro.2005.12.096

Cited by 132 publications

(123 citation statements)

References 17 publications

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“…The present model is not applicable to the only other set of quantitative Si-Ge heterojunction data, that of Zakharov et al [4], obtained using the molecular beam epitaxy (MBE) method. This is because in the MBE case the nanowire growth rate is controlled by surface diffusion [4,10], while in the present model reaction at the liquid-solid interface is assumed to control the nanowire growth. Nonetheless, we can use the present model to qualitatively explain two kinds of experimental results.…”

mentioning

confidence: 88%

“…Thus, extensive studies have been performed on the preparation, property, and growth kinetics of nanowires and nanowire structures with either hetero-or pn-junctions [1][2][3][4][5][6][7][8][9]. Nanowire heterojunction structures of various semiconductors have been fabricated, e.g., Si-Ge [3][4][5], GaAs-InAs [6] and GaP-GaAs [7,8].…”

Section: Introductionmentioning

confidence: 99%

“…Among several possible device configurations, the axial heterojunction and pn-junction structures are obviously advantageous, because they can be directly formed during VLS nanowire growth by a switching of the source material; hence they do not require additional junction fabrication processes. However, instead of possessing the ideal u Fax: +1-919-660-8963, E-mail: ttan@duke.edu abruptness on an atomic scale, NW heterojunctions grown via the VLS method always have graded composition transition regions with a relatively large junction width [4,5,7], i.e., a sizable fraction of the nanowire diameter. We suggest that this phenomenon is a characteristic feature of the VLS growth method.…”

Section: Introductionmentioning

confidence: 99%

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Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

2008

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The transition region width of nanowire heterojunctions and pn-junctions grown using vapor-liquid-solid (VLS) processes has been modeled. With two constituents or dopants I and II, the achievable width or abruptness of the junctions is attributed to the residual I atom/molecule stored in the liquid droplet at the onset of introducing II to grow the junction, and the stored I atom/molecule consumption into the subsequently grown crystal layers. The model yields satisfactory quantitative fits to a set of available Si-Ge junction data. Moreover, the model provides a satisfactory explanation to the relative junction width or abruptness differences between elemental and compound semiconductor junction cases, as well as a guideline for achieving the most desirable pn-junction widths.PACS 64.75.Jk; 61.46.Km

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mentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

2008

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“…[105][106][107][108][109] Silicon atoms, created by evaporating a heated high-purity solid Si source, are deposited onto the surface of a catalyst (Au) covered substrate, typically Si〈111〉. In this technique, elemental silicon, instead of a Si chemical compound, serves as the precursor for the fabrication of silicon nanowires.…”

Section: Elemental Siliconmentioning

confidence: 99%

“…75 The diameters of the Si nanowires cannot be precisely controlled, however, and only nanowires with diameters over 40 nm could be obtained. 105,106,109,110 In addition, the nanowire growth velocity is very low. Based on the recent reports, the growth velocity is just a few nanometers per minute.…”

Section: Elemental Siliconmentioning

confidence: 99%

Si-containing precursors for Si-based anode materials of Li-ion batteries: A review

Zhang

Liu

Zhao

et al. 2016

Energy Storage Materials

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Lithium-ion batteries with high energy density are in demand for consumer electronics, electric vehicles, and grid-scale stationary energy storage. Si is one of the most promising anode materials due to its extremely high specific capacity. However, the full application of Si-based anode materials is limited by poor cycle life and rate capability resulted from low ionic/electronic conductivity and large volume change over cycling. In recent years, great progress has been made in improving the performance of Si anodes by employing nanotechnology. The preparation methods are essentially important, in which the precursors used are crucial to design and control the microstructure for the Si-based materials. In this review, we provide comprehensive summary and comment on different Si-containing precursors for preparation of nanosized Si-based anode materials and focus on the corresponding electrochemical performances in lithium-ion batteries. Bulk sized silicon, silicon wafer and silicon microparticles are generally used as starting materials to synthesize porous or nanosized silicon, and the routes for the synthesis are rather mature and commercially available. Silica is also commonly used to form silicon by conversion through a facile magnesiothermic reduction. Silica derivation from natural resources, especially from rice husks, is much more sustainable and lower cost than alternative methods, which attracts considerable research attention. In addition, gaseous Si-based sources like SiH4, Si2H6 and SiHxCly, liquid silicon sources like trisilane and phenylsilane and elemental silicon have successfully used to prepare nanosized or carbon-coated silicon. Further considerations on massive production possibility have also been presented. Si-Containing Precursors for Si-Based Anode Materials of Li-Ion Batteries AbstractLithium-ion batteries with high energy density and large power output are in demand for consumer electronics, electric vehicles, and grid-scale stationary energy storage. Silicon is one of the most promising anode materials because it has 10 times higher specific capacity than that of the commercial graphitic carbon anode. Unfortunately, the practical utilization of silicon-based anode materials is still hindered by its low electronic conductivity and high capacity fading rate due to the large volume changes upon insertion and extraction of Li ions during cycling. Introducing porous structure, along with decreasing the dimension of Si-based materials to nanosize, is an effective way to address these problems. During the past decade, tremendous attention has been paid to improve Si anodes so as to give them better electrochemical performance. In this review, we focus the Si-containing precursors for preparation of Si-based anode materials.3

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Integration of Nanowires in New Devices and Circuit Architectures: Recent Developments and Challenges

Hernández-Ramírez

Prades

Romano‐Rodríguez

et al. 2011

Ceramic Integration and Joining Technologies

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Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy

Cited by 132 publications

References 17 publications

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

Si-containing precursors for Si-based anode materials of Li-ion batteries: A review

Integration of Nanowires in New Devices and Circuit Architectures: Recent Developments and Challenges

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