“…Heteroepitaxy using selective-area growth (SAG) [6][7][8][9][10][11][12][13] is a desirable approach to realize such integration because (1) it is a self-aligned process, therefore, the growth position can be decided in advance, (2) it is easy to obtain thin films by controlling a growth rate and/or a growth time, (3) dislocations and defects, generated by the difference in lattice constants and thermal expansion coefficients between a III-V layer and Si, can be avoided by restricting the growth area to a smaller one. In the case of heteroepitaxy of III-V semiconductors on Si, threedimensional nuclei tend to appear at the initial stage of the growth [14][15][16].…”