Growth, real structure and applications of GaSe1−S crystals

Synthesis and growth of GaSe single crystals

“…In the papers [11,12] atm. According to formula (1) the saturated pressure above the Se at 970°C is about 15 atm.…”

Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces

“…Because of a pronounced layered structure, the GaSe (0 0 1) optical surface can be prepared by mechanical cleavage [5,[13][14][15][16]. Nevertheless, there is only one work in which terahertz generation from the GaSe (0 0 1) surface was tested by experimental methods [1].…”

Growth and optical parameters of GaSe:Te crystals

“…This approach can be also applied to improve the mechanical properties of GaSe, where isovalent substitution is possible both in the cation and anion sublattices [2,[10][11][12][13]. The reported experimental data on the parameters of a number of solid solutions on the basis of GaSe suggest that the highest doping levels can be reached in GaSe:In, GaSe:S, and GaSe:Te crystals while retaining sufficiently low optical absorption.…”