2009
DOI: 10.1016/j.matchemphys.2008.09.071
|View full text |Cite
|
Sign up to set email alerts
|

Growth, structural, electrical and optical properties of the thermally evaporated tungsten trioxide (WO3) thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

6
53
0

Year Published

2009
2009
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 105 publications
(59 citation statements)
references
References 19 publications
6
53
0
Order By: Relevance
“…In some (Bi 2 O 3 ) x (WO 3 ) y (TeO 2 ) 100ÀxÀy glasses the non-linear refractive index was found: n 2 % 4.9 Â 10 À12 esu (x = 10, y = 30) and n 2 % 7.8 Â 10 À12 esu (x = 10, y = 20) and the optical band gap (E g (x, y)) was found: E g (10, 30) = 2.47 eV and E g (10, 20) = 2.7 eV [10]. Optical band gap of amorphous TeO 2 , Bi 2 O 3 and WO 3 was found to be: E g (TeO 2 ) = 3.3-3.7 eV [16,17]; E g (Bi 2 O 3 ) = 2.4-2.8 eV [18,19] and E g (WO 3 ) % 3.38 eV [20], respectively. Using 'alloy like approach' [21], the optical band gap of (Bi 2 O 3 ) x (WO 3 ) y (TeO 2 ) 100ÀxÀy glasses can be estimated using the following relation: 3 ) + (100ÀxÀy) E g (TeO 2 )]/100 and, hence, for instance: 3.23 eV 6 E g,calc.…”
Section: Introductionmentioning
confidence: 99%
“…In some (Bi 2 O 3 ) x (WO 3 ) y (TeO 2 ) 100ÀxÀy glasses the non-linear refractive index was found: n 2 % 4.9 Â 10 À12 esu (x = 10, y = 30) and n 2 % 7.8 Â 10 À12 esu (x = 10, y = 20) and the optical band gap (E g (x, y)) was found: E g (10, 30) = 2.47 eV and E g (10, 20) = 2.7 eV [10]. Optical band gap of amorphous TeO 2 , Bi 2 O 3 and WO 3 was found to be: E g (TeO 2 ) = 3.3-3.7 eV [16,17]; E g (Bi 2 O 3 ) = 2.4-2.8 eV [18,19] and E g (WO 3 ) % 3.38 eV [20], respectively. Using 'alloy like approach' [21], the optical band gap of (Bi 2 O 3 ) x (WO 3 ) y (TeO 2 ) 100ÀxÀy glasses can be estimated using the following relation: 3 ) + (100ÀxÀy) E g (TeO 2 )]/100 and, hence, for instance: 3.23 eV 6 E g,calc.…”
Section: Introductionmentioning
confidence: 99%
“…Conventionally WO 3 films are prepared by sol gel [16], pulsed laser deposition [17], thermal evaporation [18], electron beam evaporation [19], and sputtering [20]. However, the advantage of reactive magnetron sputtering for this purpose is mainly due to the high deposition rate by sputtering from metallic target, which also enables control of the stoichiometry of the deposited films.…”
Section: Introductionmentioning
confidence: 99%
“…This observation can be explained through an understanding of both the heat of formation of the Ti and W oxides, as well as their respective atomic sputtering kinetics [34]. The heats of formation reported for WO 3 and TiO 2 are -840 kJ/mol and -944 -kJ/mol, respectively [35,36].…”
Section: Film Thicknessmentioning
confidence: 94%
“…Tungsten oxide (WO 3 ) is a widely studied "chromogenic" material with interesting structural, electronic and optical properties for utilization in many scientific and technological applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Among metal oxide semiconductors, WO 3 has become a focal point of interest where nanostructured and low-dimensional forms of WO 3 are beneficial for technological development.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation