Growth, structure, and stoichiometry of epitaxial Cu‐III‐VI<sub>2</sub> films on CaF<sub>2</sub> substrates

Schümann, B.; Kühn, G.

doi:10.1002/crat.2170190811

Cited by 12 publications

References 16 publications

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Epitaxy of A^IB^IIIC semiconductors

Schümann

Tempel

Kühn

1988

Cryst. Res. Technol.

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Dedicated to Professor Hermann NEELS on the occasion of his 75th birthday Epitaxial layers of AIBIIIClI compounds were grown by the flash evaporation technique and investigated using reflection electron diffraction. Geometric-structural considerations allow the prediction of epitaxial relationships and types of epitaxy (one-or three-dimensional, multiple orientation). These properties of the epitaxial layers were confirmed experimentally. Furthermore, the epitaxial temperature ranges, non-equilibrium phases, defects, and special features of the epitaxial growth are described. Especially, the influence of lattice misfit is discussed.Epitaktische Schichten von AIBIIIC~l-Halbleitern wurden mittels Flash-Verdampfung dargestellt und durch Heflexionselektronenbeugung untersucht. Die mit geometrischstrukturellen Retrachtungen vorausgesagten Verwachsungsgesetze und -typen (ein-und dreidimensionale Epitaxie, Vielfachorientierung) konnten experimentell bestiitigt werden .Weiterhin werden solche Parameter wie Epitaxietemperaturbereich, Nichtgleichgewiclitsphasen, Defekte und Besonderheiten des epitaktischen Wachstums beschrieben. Der Einf1uB der Gitterfehlpassung ist ausfuhrlich diskutiert.

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Epitaxy of A^IB^IIIC semiconductors

Schümann

Tempel

Kühn

1988

Cryst. Res. Technol.

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CuInSe₂ epitaxial layers with sphalerite structure

Kühn

Schümann

1988

Cryst. Res. Technol.

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Bulk CuInSe, at 1083 K has a reversible phase transition of first order from the ordered chalcopyrite to the disordered sphalerite structure ( MOLLER et al. 1985). In epitaxial layers deposited on (111)-oriented GaAs and Ge substrates by the flash evaporation technique (SCHUMANN et al. 1978a(SCHUMANN et al. , 1980a) the sphalerite phase was observed already a t lower substrate temperatures (Tab. 1). This sphalerite structure is stable a t room temperature in contrast t o the bulk material and can be detected by reflection high energy electron diffraction (RHEED) technique. On { 100)-and {llO}-oriented substrate no sphalerite structure was found (TEMPEL et al.). It should be noted that parts of the sphalerite phase in the CuInSe, epitaxial layers are not detectable by RHEED beside the chalcopyrite structure. Therefore, it is possible that the layers consist of the sphalerite phase partially even a t lower substrate temperatures as given in Table 1. SCHUMANN, KUHNThe reason for this phenomenon is unknown so far. l n this paper it is tried to give an interpretation for the occurrence of the sphalerite phase in epitaxial layers at relatively low growth temperatures.Combined thermogravimetric and mass spectroscopic investigations showed that CuInSe, evaporates in a two-stage process according t o 2 CuInSe, (s) + CuzSe (6) + In,Se (g) + Se, (g) (HONLE, KUHN). At lower temperatures (up t o about 1360K) the gaseous phase consists of In,Se arid Se,. Therefore, these both compounds should occur too a t the reevaporation from the growing layers. I n accordance with these considerations, at substrate temperatures Ts 2 770 K the epitaxial layers showed a Cu excess in comparison with the stoichiometric composition (HOBLER et el.; SOMMER et al.).

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