Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD)

Naghavi, Negar; Henríquez, Rodrigo; Laptev, V. I.; Lincot, Daniel

doi:10.1016/j.apsusc.2003.08.011

Cited by 109 publications

(63 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Two energy band gaps were determined for all films: one indirect (2.12 eV) and the other direct (2.65 eV). These values were decreased for films annealed at 473-623 K and then increased for films annealed at 673-723 K. It has been reported in the literature that thin films of β-In 2 S 3 have their absorption edge mainly due to direct transition within the range of 2.0-2.9 eV [16][17][18][19]. The optical band gap of β-In 2 S 3 containing different rates of sodium has been obtained by Barreau et al [20] and found it linearly increases from 2.10 eV for pure β-In 2 S 3 to 2.95 eV when sodium content was 0.9.…”

Section: Introductionmentioning

confidence: 75%

Crystal structure and optical absorption investigations on β-In2S3 thin films

et al. 2006

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 75%

Crystal structure and optical absorption investigations on β-In2S3 thin films

et al. 2006

View full text Add to dashboard Cite

“…Among the chemical methods used for the preparation of In 2 S 3 thin films are metal-organic chemical vapor deposition [7], atomic layer deposition [8], thermal evaporation technique [9], modulated flux deposition [10], spray pyrolysis [11], electrodeposition [12], and chemical bath deposition (CBD) [1,13]. CBD has been recognized as the simplest and most economical method to obtain semiconductor thin films.…”

Section: Introductionmentioning

confidence: 99%

Indium sulfide thin films as window layer in chemically deposited solar cells

et al. 2014

View full text Add to dashboard Cite

Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 . Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In 2 S 3 thin films are photosensitive with an electrical conductivity value in the range of 10, depending on the film preparation conditions. We have demonstrated that the In 2 S 3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO 2 :F/In 2 S 3 /Sb 2 S 3 /PbS/C-Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm 2 .

show abstract

“…Therefore, CIS is an attractive material in solar cell applications and visible light photocatalytic systems [43,44]. Thin films of this semiconductor compound have been obtained by many methods such as chemical bath deposition [45,46], spray pyrolysis [47,48], and atomic layer deposition [49,50]. CIS thin films fabricated by electrochemical co-deposition of Cu-In alloy layers followed by sulfurization have shown an interesting photoelectrochemical reduction of CO 2 into methanol in 0.1 M acetate buffer electrolyte solution containing 10 mM pyridine [51,52].…”

Section: Introductionmentioning

confidence: 99%

Electrocatalytic Reduction of Carbon Dioxide using Sol-gel Processed Copper Indium Sulfide (CIS) Immobilized on ITO-Coated Glass Electrode

et al. 2015

View full text Add to dashboard Cite

Sol-gel processed copper indium sulfide (CIS) films have been processed on glass and transparent indium doped tin oxide (ITO)-coated glass electrodes by a straightforward layer by layer spin coating route yielding excellent film qualities with subsequent thermal annealing. Resulting films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis spectroscopy. We apply these films in an electrochemical cell as a working electrode and take a view on the reduction of carbon dioxide (CO 2 ) to its energy richer carbon monoxide (CO) in acetonitrile solution containing 0.1 M (C 4 H 9 ) 4 NPF 6 supporting electrolyte saturated with CO 2 . CIS films exhibit pronounced electrochemical and photoelectrochemical activities. Concomitantly, we quantify the generation of CO, which starts to evolve at a threshold potential of −0.60 V vs normal hydrogen electrode (NHE). The calculated faradaic efficiency of the electrochemical reduction of CO 2 into CO exceeds 20 (±1)% in an optimized thin-film structure.

show abstract

Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD)

Cited by 109 publications

References 15 publications

Crystal structure and optical absorption investigations on β-In2S3 thin films

Crystal structure and optical absorption investigations on β-In2S3 thin films

Indium sulfide thin films as window layer in chemically deposited solar cells

Electrocatalytic Reduction of Carbon Dioxide using Sol-gel Processed Copper Indium Sulfide (CIS) Immobilized on ITO-Coated Glass Electrode

Contact Info

Product

Resources

About