H₂ High Pressure Annealed Y-Doped ZrO₂ Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Effects of High‐Pressure H2 and D2 Post‐Metallization Annealing on the Electrical Properties of HfO2/Si0.7Ge0.3

“…As an advanced PMA method for high‐ k gate dielectrics on Si, [ 7 ] Si 1− x Ge x , [ 8 ] Ge, [ 9 ] and more futuristic III–V channels, [ 10 ] high‐pressure annealing (HPA) in H 2 or D 2 gas was demonstrated to be more effective in lowering D it than conventional atmospheric‐forming gas (a few percent H 2 in inert N 2 gas) annealing (FGA). In addition, the MOSFET reliability was significantly improved by introducing both H 2 ‐ and D 2 ‐HPA.…”

Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

“…This is due to that the high-K dielectric materials are widely accepted as a better approach for the gate dielectric of the MOSFET. That said, previous works from various sources have purposed the combination of high-K and metal gate on MOSFET devices [3][4][5][6][7][8][9][10]. A higher dielectric constant material is introduced to replace SiO2 which allows thicker dielectric to be deposited to reduce leakage without electrical thickness penalties [11][12].…”