“…13,14 For these devices, the application of a voltage to the gate modulates the current flow between the source and the drain, in analogy to conventional unipolar field effect transistors. 13,14 The magnitude of the current is determined by the proton charge carrier density in the device channel, as given by the equation n H+ = n H+ 0 − V GS C GS /et, where n H+ is the proton concentration at an arbitrary gate voltage, n H+ 0 is the proton concentration at a gate bias of 0 V, V GS is the gate voltage, C GS is the gate capacitance, e is the charge of the proton, and t is the thickness of the active layer. 13,14 Thus, a negative gate voltage induces the injection of protons into the channel, leading to an increase in the source-drain current, and a positive gate voltage depletes the channel of protons, leading to a decrease in the source-drain current.…”