Hall and Transverse Magnetoresistance Effects for Warped Bands and Mixed Scattering

Beer, Albert C.; Willardson, Robert K.

doi:10.1103/physrev.110.1286

Cited by 91 publications

(16 citation statements)

References 19 publications

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“…This small reduction could easily be overlooked without the supporting data at larger Sb/Ga ratios. It is seen that ~H/~ is about 1.2 for this sample, which is much the same as for p-type germanium (11). The hole concentration, p, and melt composition from which the crystal was prepared are shown.…”

Section: Journal Of the Electrochemical Societysupporting

confidence: 54%

GaSb Prepared from Nonstoichiometric Melts

Reid

Baxter

Miller

1966

J. Electrochem. Soc.

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Gallium antimonide single crystals have been prepared from melts ranging in composition from nearly stoichiometric to Sb/Ga atom ratios of about 3/1. P-type GaSb and, by suitable impurity additions, n-type GaSb have been produced with superior electrical properties. The residual acceptor concentration has been reduced to the order of 2 x 1016/cm ~ by the growth of crystals from antimony-rich melts. Hole mobilities at 78~ of 6000 cm2/voltsec and electron mobilities of over 10,000 cm'-'/volt-sec have been realized.

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Section: Journal Of the Electrochemical Societysupporting

confidence: 54%

GaSb Prepared from Nonstoichiometric Melts

Reid

Baxter

Miller

1966

J. Electrochem. Soc.

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“…Initially the theory was brought in qualitative agreement with observations when both heavy-and light-hole conduction was considered [ 11. However, a detailed description of the structure in the magnetic field dependence of the Hall coefficient was not arrived at until warping of the heavy-hole band and mixed scattering of acoustical phonons and impurities was taken into account [2]. This is, a t present, the state of the current theory which is in fair agreement with observed galvanomagnetic phenomena a t comparatively low temperatures.…”

Section: Introductionmentioning

confidence: 94%

Gahvanomagnetic effects in p-Type germanium

Johannessen¹

1972

Phys. Stat. Sol. (a)

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The theory of Hall and transverse magnetoresistance effects for mixed scattering and warped energy bands in p‐type germanium has been extended to include optical phonon scattering. The extended theory agrees well with the experimental Hall factor as function of temperature. Galvanomagnetic phenomena observed in germanium films are discussed with reference to the extended theory. Deduced values of carrier density and mobility show that defect acceptors such as dislocations largely determine the electrical properties of germanium films. A method is described by which the Hall factor may be arrived at through independently measured transverse magnetoresistance.

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“…It is found that the value of is greater than the value of ,kI2 in every case (as for thin samples also) indicating that ionized impurity scattering is greater for light holes than for heavy holes. Beer and Willardson [5] have also found that /I1 is greater than /Iz from their dc measurement of galvanomagnetic properties on p-type Ge. It is evident from Table 2 that (zl) for light holes is smaller as compared to (zz) for heavy holes.…”

Section: Experimental Results and Comparison With Theorymentioning

confidence: 93%

“…5 cm. The sample parameters along with their designation number are given in Table 1. T a b l e 1 Samples designation and parameters 1 carrier sample NO.…”

Section: Experimental Results and Comparison With Theorymentioning

confidence: 98%

The free carrier magneto‐microwave effects in p‐type germanium

Mehra

Srivastava

1975

Physica Status Solidi (b)

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The free carrier magneto-microwave effects, namely, the Kerr effect, the Faraday rotation, and the magneto-absorption, have been studied in detail in p-type Ge in Faraday configuration. The experimental analysis applies t o guided waves and treats multiple reflections exactly. The theoretical analysis takes account of the complex valence band structure and the contributions from the light and heavy holes, separately. The mixed scattering due to ionized impurities and lattice vibrations has been taken into consideration. The values of the ionized impurity scattering parameter and relaxation time obtained from Kerr effect measurements compare well with the values obtained by Faraday rotation measurements. Magneto-absorption measurements have been done on the samples used for Faraday rotation measurements and the experimental results are compared with theoretical results using the transport parameters obtained from Faraday rotation measurements. Good agreement has been found between the two. The results of the above three types of measurements indicate the presence of larger impurity scattering and smaller relaxation time for light holes as compared with the heavy holes. The values of the relaxation times which has been estimated at 77 K (by Kerr effect measurements) compare well with the values obtained by earlier workers from cyclotron resonance and magneto-plasma studies.Die Magneto-Mikrowellen-Effekte freier Ladungstrager, der Kerr-Effekt, der FaradayEffekt und die magnetische Absorption, wurden in p-leitendem Ge in der Faraday-Konfiguration ausfuhrlich untersucht. Die experimentelle Analyse wird auf die Ausbreitung in Wellenleitern ausgedehnt und behandelt exakt die Mehrfachreflexionen. Die theoretische Analyse beriicksichtigt getrennt die komplexe Valenzbandstruktur und die Beitrage der leichten und schweren Locher. Die gemischte Streuung aufgrund ionisierter Storstellen und Gitterschwingungen wird ebenfalls in Betracht gezogen. Die Werte des Streuparameters der ionisierten Storstellen und die Relaxationszeit aus Kerr-Effekt-Messungen stimmen gut mit den Werten aus Faraday-Effekt-Messungen uberein. Magneto-Absorptions-Messungen werden an den fur den Faraday-Effekt benutzten Proben durchgefuhrt und die experimentellen Ergebnisse mit theoretischen Ergebnissen verglichen, in die die Transportparameter aus den Faraday-Effekt-Messungen eingehen. Zwischen beiden wird gute ubereinstimmung gefunden. Die Ergebnisse der drei Arten von Messungen weisen auf groBere Streuung a n Storstellen sowie kleinere Relaxationszeiten fur leichte Locher im Vergleich zu schweren Lochern hin. Die Werte fur die Relaxationszeiten, abgeschatzt bei 77 K, stimmen gut rnit den Werten uberein, die von friiheren Autoren mit der Zyklotron-Resonanz-Methode und aus Magneto-Plasma-Untersuchungen gewonnen wurden.

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Hall and Transverse Magnetoresistance Effects for Warped Bands and Mixed Scattering

Cited by 91 publications

References 19 publications

GaSb Prepared from Nonstoichiometric Melts

GaSb Prepared from Nonstoichiometric Melts

Gahvanomagnetic effects in p-Type germanium

The free carrier magneto‐microwave effects in p‐type germanium

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