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Evaluation of the transport integrals for warped bands using the method of McClure was done for relaxation times determined by mixed scattering from acoustic phonons and ionized impurities. Hall and transverse magnetoresistance coefficients were calculated for parameters characteristic of the degenerate valence bands in germanium and silicon, as obtained from cyclotron resonance data. For germanium, results are consistent with observation in regard to a density-of-states ratio for fast and slow holes of approximately 4% and in the occurrence of fine structure, especially a minimum in the Hall coefficient between 1000 and 2000 gauss at 80°K, depending on the impurity content. With parameters representative of silicon, substantially different behavior is predicted, in line with experiment.

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