High-Temperature Hall Coefficient in GaAs

Aukerman, L. W.; Willardson, Robert K.

doi:10.1063/1.1735727

Cited by 68 publications

(10 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The variations of the resistivity and Hall constant are similar to those observed on GaSb [6] or GaAs [7]. Such variations imply the existence of two conduction bands.…”

Section: Resistivity and Hall Constantsupporting

confidence: 79%

Conduction Bands of GaSb‐InSb Mixed Crystals with a Low Concentration of InSb

Avérous

Bougnot

Calas

1968

Physica Status Solidi (b)

View full text Add to dashboard Cite

An investigation is made of resistivity, Hall effect, and piezoresistance of n-type GaSbInSb mixed single crystals with 0 to 6 at% InSb. We show that a) two conduction bands contribute to conduction; b) the deformation potential Eu and the rate of change of A E referred to the volume, dAE/d In V, decrease when the InSb concentration increases.Nous avons BtudiPi la rAsistivit6, l'effet Hall et la piPizor6sistanoe de cristaux mixtes de GaSb-InSb de type n, pour des pourcentages atomiques d'InSb compris entre 0 et 6%. Nous avons montrB a) qu'il existe encore deux bandes de conduction participant a i la conduction; b) que le potentiel de d6formation & et le taux de variation de A E par rapport au volume, dAE/d In V , diminuent quand le pourcentage en InSb augmente.

show abstract

“…The variations of the resistivity and Hall constant are similar to those observed on GaSb [6] or GaAs [7]. Such variations imply the existence of two conduction bands.…”

Section: Resistivity and Hall Constantsupporting

confidence: 79%

Conduction Bands of GaSb‐InSb Mixed Crystals with a Low Concentration of InSb

Avérous

Bougnot

Calas

1968

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The observed variation of RE with temperature for any given film can be described in accordance to the relation where t = pJpl and c = pz/pl, p1 and pz am the concentrations of light end heavy holes, and pI and p2 are their mobilities, respectively. The Hall coefficient can also be expressed in relation to its low-temperature limit R, by [17] where RT is the value of RR at any temperature T, and AEv is the separation between the two valence band edges. The Hall coefficient will reach its maximum value when tc = 1, i.e., when the hole conductivities between two bands become equal.…”

Section: Resultsmentioning

confidence: 99%

Electrical Transport Properties of Epitaxial Films of Pb1−xSnxTe

Dawar

Kumar

Paradkar

et al. 1982

phys. stat. sol. (a)

View full text Add to dashboard Cite

Hall coefficient and dc conductivity measurements are made on p-type Pbl -&n,Te epitaxial films having values of x in the range 0.15 to 0.28. The various band parameters i.e. separation between two valence bands, mobility ratio, effective mass ratio, and population ratio for light and heavy holes, are estimated as a function of 2. These results are compared with reported data on bulk samples.Es wird dcr Hall-Koeffizient und die Gleichstromleitfahigkeit in p-leitenden Pbl -,Sn,Te-Epitaxieschichten mit z-Wertcn im Bereich von 0,15 bis 0,28 gemessen. Die verschiedenen Bandparameter, wie Abstand der beiden Valenzbander, Beweglichkeitsverhaltnis, Verhaltnis der effektiven Massen und das Besetznngsverhaltnis fur leichte und schwere Locher werden in AbhLngigkeit von 5 berechnet. Die Ergebnisse werden mit vorhandenen Literaturwerten an Volumenproben verglichen.

show abstract

“…I n the case when two kinds of current carriers in the semiconductor are present. the Hall coefficient satisfies the following relation [9] : where R, means Hall coefficient a t low temperature, 12, = const, AE, is the overlap of the valence subbands. From the plot of In [(R,(T) -R,)/R,] versus 1/T, the AE,.…”

Section: Galvanomagnetic Measurementsmentioning

confidence: 99%

Structural and Galvanomagnetic Properties of Pb1−xMnxTe Single Crystals Grown by the Bridgman-Stockbarger Method

Korczak

Subotowicz

1983

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Pb1−xMnxTe (x ≦ 0.12) single crystals grown by Bridgman‐Stockbarger method are investigated. Diffractometric measurements are performed, and the crystallographic structure and dependence of the lattice parameter on x are established. Galvanomagnetic measurements are performed in the temperature range 77 to 330 K. The variation of the composition and stoichiometry of the alloy in the direction of crystal growth is found and measured. The overlap of the valence bands ΔEv depending on the manganese content x is determined.

show abstract

High-Temperature Hall Coefficient in GaAs

Cited by 68 publications

References 2 publications

Conduction Bands of GaSb‐InSb Mixed Crystals with a Low Concentration of InSb

Conduction Bands of GaSb‐InSb Mixed Crystals with a Low Concentration of InSb

Electrical Transport Properties of Epitaxial Films of Pb1−xSnxTe

Structural and Galvanomagnetic Properties of Pb1−xMnxTe Single Crystals Grown by the Bridgman-Stockbarger Method

Contact Info

Product

Resources

About