Hall effect in MnBi thin films

Angadi, M. A.; Thanigaimani, V.

doi:10.1007/bf00722078

Cited by 11 publications

(4 citation statements)

References 22 publications

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“…3a . The densities of both holes and electrons are almost the same at approximately 9 × 10 20 cm −3 (0.02 hole/electron per formula), and they are temperature independent, consistent with previously reported values 24 . The mobilities of both the charge carriers are high, i.e., approximately 5000 cm 2 V −1 s −1 at 2 K. This value decreases with increasing temperature to 900 cm 2 V −1 s −1 at 40 K. Fitting with three or more charge carrier models would be more accurate because of the complicated band structure at the Fermi energy, but the conclusion of the high mobility does not change.…”

Section: Resultssupporting

confidence: 91%

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

Gayles

Yao

et al. 2021

Nat Commun

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A large non-saturating magnetoresistance has been observed in several nonmagnetic topological Weyl semi-metals with high mobility of charge carriers at the Fermi energy. However, ferromagnetic systems rarely display a large magnetoresistance because of localized electrons in heavy d bands with a low Fermi velocity. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes’ mobilities are both 5000 cm2V−1s−1 at 2 K, which are one of the highest for ferromagnetic materials. These phenomena are due to the spin-polarised Bi 6p band’s sharp dispersion with a small effective mass. Our study provides an approach to achieve high mobility in ferromagnetic systems with a high Curie temperature, which is advantageous for topological spintronics.

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Section: Resultssupporting

confidence: 91%

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

Gayles

Yao

et al. 2021

Nat Commun

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“…It is likely that these films not only have a large defect density, but also their structure is different compared t o as-deposited films. This is also confirmed by measuring galvanomagnetic effects [3] in MnSb films which exhibit both positive and negative magnetoresistance and Hall coefficient depending on the substrate temperature. The Curie temperature corresponding to the phase transition now occurs a t a much higher temperature.…”

Section: Resultssupporting

confidence: 58%

“…Manganese forms very interesting compounds, e.g. MnBi [2], MnSb [3], MnAs, and MnAl [4] in thin film form which exhibit ferromagnetic properties. Although there are several reports on the formation [5,6], structural [7], magnetic [8, 91, and transport [lo to 121 properties of MnBi films, there are very few reports on other compounds of manganese.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of MnSb films

Angadi

1988

Phys. Stat. Sol. (a)

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Thickness dependence of the electrical resistivity and the temperature coefficient of resistance (TCR) is reported for MnSb films in the thickness range 35 to 300 nm for different substrate temperatures. Films deposited at higher substrate temperatures exhibit marked size effect. The thickness dependence of the Curie temperaure also indicates some size effect. The experimental data are analysed using Fuchs‐Sondheimer and Mayadas‐Shatzkes theories.

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“…4 20 For all the samples, the R s values are about one order of magnitude larger than R o values, which is consistent with past research. 21 As shown in the right inset of Fig. 4, R s increases from 1.26ϫ 10 −10 to 1.49 ϫ 10 −10 ⍀ cm/ G and R o decreases from 5.7ϫ 10 −12 to 1.0 ϫ 10 −13 ⍀ cm/ G as the Pt concentration increases from 0 to 3 at.…”

Section: Resultsmentioning

confidence: 75%

Structural, magnetic and magneto-transport properties of Pt-alloyed MnBi thin films

Kharel

Skomski

Kirby

et al. 2010

Journal of Applied Physics

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The structural, magnetic and magneto-transport properties of highly c-axis oriented Mn 55−x Pt x Bi 45 ͑x = 0, 1.5, 3, and 4.5͒ thin films have been investigated. The coercivity of the Pt-alloyed thin films increases and the saturation magnetization decreases as the Pt concentration increases. The anisotropy field H o increases as a function of Pt concentration, too but the coercivity increases more rapidly than the anisotropy field. This indicates an enhanced domain-wall pinning, caused by increased interstitial disorder due to the occupancy of regular Mn sites by Pt. The same mechanism explains the reduced magnetization. All samples exhibit a large extraordinary Hall effect with anomalous Hall coefficient about an order of magnitude larger than the ordinary Hall coefficient.

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Hall effect in MnBi thin films

Cited by 11 publications

References 22 publications

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

Electrical properties of MnSb films

Structural, magnetic and magneto-transport properties of Pt-alloyed MnBi thin films

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