Phase-change probe memory using Ge 2 Sb 2 Te 5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in 2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phasechange probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in 2 density under pico Joule energy within micro second period.