Hardness assurance testing for proton direct ionization effects

Schwank,; Shaneyfelt,; Ferlet-Cavrois,; Dodd,; Blackmore,; Pellish,; Rodbell,; Heidel,; Маршалл, .; LaBel,; Gouker,; Tam, Hwa Yaw; Wong, K.F.; Wen, Charles H.-P.; Reed,; Dalton,; Swanson,

doi:10.1109/radecs.2011.6131454

Cited by 5 publications

(1 citation statement)

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“…They alleged that the protons caused SEUs via primary particle direct ionization. Work transitioned to more applied efforts [2]- [5] and important follow-on studies at additional CMOS process nodes, including 90, 45, 32, and 28 nm [6]- [11]. Our work here focuses on the need to revisit and refine several previous radiation hardness assurance (RHA) postulates related to low-energy proton effects.…”

Section: Introductionmentioning

confidence: 99%

Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

Pellish

Marshall²,

Rodbell

et al. 2014

IEEE Trans. Nucl. Sci.

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We report low-energy proton and low-energy alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 MeV. The importance of low-energy protons to systemlevel single-event performance is based on the technology under investigation as well as the target radiation environment.

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