The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles; SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results

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A new technique is developed to precisely measure the width of propagating voltage transients induced by irradiation of inverter chains. The technique is based on the measurement of the supply current in a detection inverter. Index Terms -Single Event Transient, chains of inverters, pulsed laser irradiation, SET width

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