Test procedures for proton-induced single event latchup in space environments

Felix,; Schwank,; Shaneyfelt,; Baggio,; Paillet,; Ferlet-Cavrois,; Dodd,; Girard, Éric; Blackmore,

doi:10.1109/radecs.2007.5205542

Cited by 3 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Results on advanced IC technologies showed a much larger effect of proton angle of incidence on SEL (up to a 16 times increase in SEL cross section at elevated temperatures) as illustrated in Fig. 4, [5]. This figure is a plot of the SEL cross section for SRAMs from one manufacturer characterized at a temperature of 75 C at angles of incidence of 0 and 85 degrees at proton energies from 50 to 495 MeV.…”

Section: Proton-induced Single-event Latchupmentioning

confidence: 92%

See 1 more Smart Citation

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

Schwank

Shaneyfelt

Dodd

et al. 2009

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Proton-induced single-event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects.

show abstract

Section: Proton-induced Single-event Latchupmentioning

confidence: 92%

“…4. Latchup cross section versus proton energy for SRAMs for angles of incidence of 0 and 85 degrees measured at a temperature of 75 C. (After [5].) factor of larger for devices characterized at 75 C than for devices characterized at room temperature.…”

Section: Proton-induced Single-event Latchupmentioning

confidence: 99%

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

Schwank

Shaneyfelt

Dodd

et al. 2009

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…Temperature variations are crucial, especially for space, military, nuclear, and avionics applications, i.e., applications that are usually affected by soft errors. At the experimental level, several works investigate the impact of temperature on device sensitivity, such as in [8][9][10], where the high temperature effect was studied when irradiating SRAMs with protons. However, very few of these studies involved irradiating SRAMs with neutrons.…”

Section: State-of-the-art Methodsmentioning

confidence: 99%

Soft errors in commercial off-the-shelf static random access memories

Dilillo

Bosser

Saigné

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on static random access memory (SRAM). We detailed irradiation test techniques and results from irradiation experiments with several types of particles. Two commercial SRAMs, in 90 and 65 nm technology nodes, were considered as case studies. Besides the basic static and dynamic test modes, advanced stimuli for the irradiation tests were introduced, as well as statistical postprocessing techniques allowing for deeper analysis of the correlations between bit-flip crosssections and design/architectural characteristics of the memory device. Further insight is provided on the response of irradiated stacked layer devices and on the use of characterized SRAM devices as particle detectors.

show abstract