Heat capacity and phase transitions in highly anisotropic AnIIIBVI-type semiconductors and their analogs at low temperatures

Mamedov, K. K.; Yangirov, A. Yu.; Guseinov, A. G.; Abdullaev, A.M.

doi:10.1002/pssa.2211060202

Cited by 10 publications

(5 citation statements)

References 21 publications

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“…These values are in reasonable agreement with those obtained from the previous figures. As to the value of AE,, it agrees with that calculated by other authors [3]. From the same figure we notice that in the transition region the carrier concentration decreases slightly with increasing temperature.…”

Section: Resultssupporting

confidence: 91%

“…The crystal structure of this compound has not been established unambiguously. It has been reported [3] that it has a monoclinic type of crystal structure and the lattice constants are a = 1.09 nm, b = 1.10 nm, and c = 1.51 nm. The ternary compounds TlGaSez, TlGaTe2, and TlInS2 have phase transitions (PTs), and it is thought to be an established fact that a PT takes place in these crystals.…”

Section: Introductionmentioning

confidence: 99%

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New Technique for Crystal Growth and Phase Transition in TlInS2 Crystals

Gamal

1996

Phys. Stat. Sol. (a)

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

New Technique for Crystal Growth and Phase Transition in TlInS2 Crystals

Gamal

1996

Phys. Stat. Sol. (a)

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“…The values of the fit are listed in table 1. From the fit we find a larger D value of InSe than the 196 K reported by Mamedov et al [16]. It should be noted that Varshni's fitting often leads to a large Debye temperature D in polar semiconductors which have optical phonon branches energetically next to acoustic phonon branches [17].…”

Section: Excitonic Absorptionmentioning

confidence: 52%

Excitonic absorption and Urbach-Martienssen's tails in Er-doped and undoped n-type InSe

Abay

Güder

Efeoǧlu

et al. 1999

J. Phys. D: Appl. Phys.

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Optical absorption spectra of InSe and InSe:Er single crystals were investigated just below and in the excitonic resonance energy region. The temperature dependence of the free exciton transition associated with the direct gap of InSe and InSe:Er were measured in the temperature range 10 < T < 340 K. The parameters describing the temperature variation of both the spectral position and the broadening function of the excitonic resonance confirm the dominating role of the average energy of crystal phonons. The Lorenzian lineshape was used to fit the excitonic structures. The increased absorption intensity and the narrowed lineshape of the excitonic resonances in InSe:Er crystals were attributed to the [Er] = 0.03 at% dopant atoms. The exponentially increasing absorption tail was explained as an Urbach-Martienssen's (U-M's) tail for both InSe and InSe:Er samples in the 100-340 K temperature range. The characteristic tail width, Urbach's energy E U , was obtained as a function of temperature. The temperature dependence of E U was interpreted based on the general models of this rule. The Urbach's energy decreased as a function of temperature in the temperature region investigated for the Er-doped sample. Such a decrease of the Urbach's energy can be explained to be due to the reduction of the electronic distortion caused by the structural disorders associated with the planar defects in the crystal lattice of InSe by the Er-doping procedure.

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“…Rabenau et al (1960) refute the presence of Tl 2 Te in the phase diagram, while Ferrier et al (1972) showed that Tl 2 Te can exist in this diagram. The type of crystal structure of this crystal is rhombic with lattice spacing a = 0.892 nm and c = 1.263 nm (Vosil'ev 1968, Mamedov et al 1988. Only x-ray photoemission spectra (Culter 1976), microhardness measurements (Asadov et al 1977) and the studies of the influence of Cd, Bi, Se, Zn, Ga, and In on the electrical resistance, surface tension and microhardness (Karimov 1979) have been published so far.…”

Section: Introductionmentioning

confidence: 99%

Thermal and electrical transport properties of single crystals

Gamal¹,

Nassary²,

Nagat³

et al. 1996

Semicond. Sci. Technol.

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Electrical conductivity, Hall effect and thermoelectric power measurements are made for the compound Tl 2 Te. This compound, which is a semiconductor grown in a single-crystal form, is studied over a wide range of temperature from 150 to 375 K. The crystal is grown by a modification of the Bridgman method. The combination of the electrical and thermal measurements in the present investigation makes it possible to find various physical parameters and to reveal the general behaviour of this semiconductor.

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Heat capacity and phase transitions in highly anisotropic AnIIIBVI-type semiconductors and their analogs at low temperatures

Cited by 10 publications

References 21 publications

New Technique for Crystal Growth and Phase Transition in TlInS2 Crystals

New Technique for Crystal Growth and Phase Transition in TlInS2 Crystals

Excitonic absorption and Urbach-Martienssen's tails in Er-doped and undoped n-type InSe

Thermal and electrical transport properties of single crystals

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