Heat mirror coatings for energy conserving windows

Lampert, Carl M.

doi:10.1016/0165-1633(81)90047-2

Cited by 291 publications

(76 citation statements)

References 122 publications

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“…TCOs are well known and widely used for a long time in optoelectronics industries as well as in research fields. After the first report of transparent conducting cadmium oxide (CdO) thin film by Badekar [67] in 1907, extensive works have been done in the field of TCO technology to prepare new types of TCOs with wide ranging applications [68][69][70][71][72][73][74][75][76][77][78]. Technologically, these TCOs are being used extensively in various fields, which include solar cells, flat panel displays (FPDs), low-emissivity ("low-e") windows, electromagnetic shielding of cathode-ray tubes in video display terminals, electrochromic (EC) materials in rear-view mirrors of automobiles, EC-windows for privacy (so-called smart windows), oven windows, touch-sensitive control panels, defrosting windows in refrigerators and airplanes, invisible security circuits, gas sensors, biosensors, organic light-emitting diodes (OLED), polymer light-emitting diodes (PLED), antistatic coatings, cold heat mirrors, etc.…”

Section: Introduction To Transparent Conducting Oxidesmentioning

confidence: 99%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

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Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O 2 /N 2 /CH 4 , etc.) [1][2][3][4]. In this chapter, we have discussed, in details, the formation of spinel and delafossite materials of the form AB 2 O 4 and ABO 2 (A and B may be monovalent, divalent, trivalent, or tetravalent cations, depending on the crystal structure, described later) by reactive sputtering technique. Specially, wide bandgap, ptype semiconducting, and transparent oxide materials with delafossite and spinel structure, having interesting applications in "Transparent Electronics," have been discussed in details. In Sects. 12.2-12.5, a detailed review on the structural, optical, and electrical properties of these p-type transparent conducting oxides (p-TCOs), deposited by reactive sputtering technique, has been presented and the origin of p-type conductivity of these materials has been discussed with considerable attention. Most of the results presented in these sections are reported by various authors working on this field. In Sect. 12.6, synthesis and electro-optical characterization of one of the very important delafossite, p-type semiconducting, and wide-bandgap material, such as CuAlO 2 , produced by our group via reactive sputtering technique, have been discussed in details. Detailed discussions on spinel-and delafossitestructured material can be found in various literatures [5][6][7][8][9][10][11][12][13][14]. Also, detailed reviews on the p-TCO materials have been published by us and others [15][16][17], which cover the syntheses and properties of a range of p-TCO materials reported so far.

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Section: Introduction To Transparent Conducting Oxidesmentioning

confidence: 99%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

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“…The high electrical conductivity of ITO films results in a high reflectivity in the infrared region, which gives applications to thermal insulation of windows, prevention of radiative cooling [4], etc.…”

Section: Introductionmentioning

confidence: 99%

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

et al. 2009

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Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. The high roughness of the polymer substrate affects the properties of indium tin oxide films. The transmittance, the resistivity, and the optical band gap decrease with increasing the film thickness while the refractive index increases. The present indium tin oxide films are amorphous, transparent and have relatively low resistivity. These properties are suitable as transparent electrode for organic light-emitting diodes, touch screens, and in piezoelectric applications.

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“…Due to its advantageous material properties SnO 2 powders have been widely used for technical applications such as gas sensors, thick film resistors or as catalysts [1][2][3][4][5][6][7][8][9]. In order to control the electrical and optical properties dopants such as antimony, indium, fluorine, molybdenum or niobium were added [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Changes of Auger parameter in doped SnO₂ powders

Dobler¹,

Oswald²,

Behr³

et al. 2003

Cryst. Res. Technol.

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Doped SnO2 powders were studied using X‐ray photoelectron spectroscopy (XPS). The Auger parameters (AP) for Sn and different doping elements were determined. A dependence of the Auger parameter on the doping element and doping concentration was observed. The detected shift could be correlated with the electrical properties of the studied samples as well as with the formation of a second phase and a segregation layer at the surface. Bulk doping with elements having a valency greater than 4 (Sb), leads to an increase of the electron density connected with a decrease of resistivity. In this case we can observe the shift of the AP to higher values. This means that the relaxation of the electron holes is energetically more favourable for Sb doped than for pure tin oxide. On the other side, doping with elements the valency of which is less than 4 (In) on tin sites leads to a decrease in electron density and causes an increase of resistivity of the material. We observe in this case a shift of the AP to lower values due to lower relaxation energy. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Heat mirror coatings for energy conserving windows

Cited by 291 publications

References 122 publications

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

Changes of Auger parameter in doped SnO₂ powders

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Heat mirror coatings for energy conserving windows

Cited by 291 publications

References 122 publications

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Properties of Indium Tin Oxide Thin Films Deposited on Polymer Substrates

Changes of Auger parameter in doped SnO2 powders

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Product

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Changes of Auger parameter in doped SnO₂ powders