Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates

Song, Ho Keun; Seo, Heewon; Kwon, SuYeon; Moon, Jeong Hyun; Yim, Jeong Hyuk; Lee, Jong Ho; Kim, Hyeong Joon

doi:10.1016/j.jcrysgro.2007.04.042

Cited by 8 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a result, off-axis SI 4H-SiC are more expensive than on-axis material. Therefore, epitaxial growth on costly off-axis SI 4H-SiC substrate should offer improvements not only morphologically but also in terms of hitting the require doping level of 10 20 cm -3 [41]. To realize an all-SiC antenna, this approach would yield the best performance due to the high quality and heavily doped antenna electrode layer.…”

Section: Resultsmentioning

confidence: 99%

“…It is proposed in future work that a costly off-axis SI 4H-SiC substrate could offer improvements for this structure option. In fact there is no reason, based on the literature where doping levels of 10 20 cm -3 are routinely achieved during the growth of 4H-SiC [41]. And due to the high quality of the doped layer this approach to realizing the antenna should yield the best performance.…”

Section: Chemical Vapor Deposition (Cvd) Growthmentioning

confidence: 99%

See 1 more Smart Citation

A Biocompatible SiC RF Antenna for In-Vivo Sensing Applications

et al. 2012

View full text Add to dashboard Cite

In this study, we present a small-size implantable RF antenna (biosensor) which is made of fully biocompatible material, cubic silicon carbide. Silicon Carbide is one of the few semiconducting materials that combine biocompatibility and sensing potentiality. The hypothesis of a SiC based antenna, to be used for glucose monitoring, is that the changes in the medium surrounding the antenna affect the antenna properties such as input impedance and resonance frequency, and these changes can be used to estimate the patient’s plasma glucose level. An all-SiC patch antenna has been designed, simulated and fabricated with a target frequency of operation of 10 GHz. A Cu patch antenna was fabricated on SiC to serve as a reference antenna. The all-SiC antenna was realized by growing a poly-crystalline 3C-SiC film using CVD on a thick oxide layer that had been coated with poly-Si to serve as a growth template. A semi-insulating 4H-SiC substrate was used to minimize RF losses during operation.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Chemical Vapor Deposition (Cvd) Growthmentioning

confidence: 99%

A Biocompatible SiC RF Antenna for In-Vivo Sensing Applications

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Different types of 4H-SiC based power devices had different requirements on the conduction type and doping concentration of epitaxial films [154,155]. Doping was a key technique to change the conduction type and carrier concentration of semiconductor materials.…”

Section: Doping Of 4h-sic Epitaxial Filmsmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

show abstract

“…Recently, the demand for more powerful and sophisticated device applications has led to studies on the fabrication of compound semiconductors on porous substrates. The most outstanding advantage of porous semiconductors for substrate applications is that the nanopatterned porous structures can act as a sink to accommodate the strain and threading dislocations in order to obtain the subsequent layer with lower strain and dislocation densities [1].…”

Section: Introductionmentioning

confidence: 99%

Enhanced optical performance of electrochemically etched porous silicon carbide

Naderi¹,

Hashim²,

Saron³

et al. 2013

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples.

show abstract

Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates

Cited by 8 publications

References 15 publications

A Biocompatible SiC RF Antenna for In-Vivo Sensing Applications

A Biocompatible SiC RF Antenna for In-Vivo Sensing Applications

Advances and challenges in 4H silicon carbide: defects and impurities

Enhanced optical performance of electrochemically etched porous silicon carbide

Contact Info

Product

Resources

About