Heavy and light exciton states in c-AlGaN/GaN asymmetric double quantum wells

Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

“…e hh b E denotes the bounding energy of exciton, which depends on external perturbation such as pressure and temperature through electron and hole effective masses [32][33][34]. Exciton energies are determined by employing a variational procedure [35]. Restricting ourselves to the analysis of s-like excitons, this implies the proposal of a normalized trial wavefunction x  , which is built from the product of uncorrelated electron and hole subband states together with the inclusion of a hydrogenic-s-like factor [36][37][38].…”

“…where 𝐾 𝐵 , 𝐸 𝐹 , 𝑖, i  , and 𝑇 denote the Boltzmann constant, Fermi level, subband level index, electron wave function in the i-th subband, and absolute temperature, respectively [36]. * m is an average electron effective mass in the xy kk − plane so that it can be written as in conduction band edge as follows [35]:…”

“…Restricting ourselves to the analysis of s-like excitons, this implies the proposal of a normalized trial wavefunction x  , which is built from the product of uncorrelated electron and hole subband states together with the inclusion of a hydrogenic-s-like factor [36][37][38]. Then, the exciton energy is obtained by minimizing the , and the electron-hole interaction Hamiltonian ( ) [35][36][37][38]. The binding energy of the s-like exciton resulting from the coupling of the electron in the i-th subband and the hole in the j-th subband is then expressed by…”

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

“…[32][33][34] Exciton energies are determined by employing a variational procedure. [35][36][37][38] The binding energy of the s-like exciton resulting from the coupling of the electron in the i'th subband and the hole in the j'th subband is then given by 35 Furthermore, E g ðT; 19,21,23 and E g ð0;0Þ stands for the band gap energy of GaN or InGaN in the absence of the hydrostatic pressure and at temperature 0K. In this work, parameters α, σ, and γ are independent of the electron concentration; their numerical values are listed in Table 1.…”

“…Further, Ebe,hh denotes the bounding energy of exciton, which depends on external perturbation, such as pressure and temperature, through electron and hole effective masses 32 – 34 Exciton energies are determined by employing a variational procedure 35 – 38 The binding energy of the s-like exciton resulting from the coupling of the electron in the i’th subband and the hole in the j’th subband is then given by Ebij=Eie+Ejh−Ex 35 .…”