Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

Abstract

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications

“…Silicon carbide (SiC) is a leading semiconductor material applied in high temperature, high power, high frequency and some harsh environments, because of its wide band gap, high breakdown voltage and high electron mobility. [1,2] In recent years, crystalline and polycrystalline SiC has also become attractive for the realization of micro-and nanoelectromechanical systems (MEMS and NEMS). Compared to Si, the superior chemical, thermal and mechanical properties of SiC make it possible to overcome the limited operation temperature (below 250 • C) in Si-based MEMS devices and apply in some harsh environments.…”

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

“…Meanwhile, methylsilane, trimethylsilane, and hexamehyldisilane have both Si and C atoms. Therefore, methylsilane [ [3] , [4] , [5] , [6] , [7] , [8] , [9] , [10] , [11] , [12] , [13] , [14] , [15] ], trimethylsilane [ 16 ], and hexamethyldisilane [ [17] , [18] , [19] , [20] , [21] , [22] , [23] , [24] , [25] , [26] , [27] , [28] , [29] ] have been employed in the SiC film formation experiments with various deposition methods such as thermal CVD and plasma-enhanced CVD.…”

Application of Ion Beam Induced Chemical Vapor Deposition for SiC Film Formation on Si Substrates using Methylsilane

“…Subsequent various studies [5][6][7][8][9][10][11][12][13][14][15][16][17] also succeeded in producing SiC films on Si using various deposition methods with methylsilane. In those studies [4][5][6][7][8][9][10][11][12][13][14][15][16][17], methylsilane was selected as a gas source because the methylsilane molecule has a Si-C bond and its stoichiometric composition (atomic concentration ratio of Si to C) is the same as that of SiC. On the other hand, Xu et al reported that the dissociative adsorption of methylsilane onto the Si surface broke the Si-C bond [18].…”