Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range

Yan, Chenglin; Li, Xiaopeng; Zhou, Keya; Pan, Anlian; Werner, P.; Mensah, Samuel L.; Vogel, Alexander; Schmidt, Volker

doi:10.1021/nl203857h

Cited by 38 publications

(39 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 5 ] Beyond nanowires, spheroidal nanocrystals (NCs) of GaSb are interesting as they can provide beneficial features, especially when used in a free‐standing form in charge‐based memory devices, [ 6 ] or alternatively, when deposited as porous films to make materials with new photonic properties. [ 7 ] Studies on the growth of unsupported GaSb NCs, however, have been scarce when compared with the nanowire literature.…”

Section: Introductionmentioning

confidence: 99%

Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy

Üner

Thimsen

2020

Plasma Processes & Polymers

View full text Add to dashboard Cite

III-V semiconductor nanocrystals are an important class of optoelectronic materials. However, the gas-phase synthesis of these materials, especially of the stibnides, has been left relatively unexplored. In this study, we demonstrate the synthesis of free-standing GaSb nanocrystals for the first time, using a novel gasphase process. We show that when elemental aerosols are used as precursors for Ga and Sb, the elements mix at the nanometer length scale as the aerosols pass through a nonequilibrium plasma reactor. At sufficiently high plasma power, the mixing produces free-standing GaSb nanocrystals, with a small amount of excess Ga segregated at the periphery of the particles. The reaction is initiated by vaporization of elemental aerosols in the plasma despite the low-background temperature. Ion bombardment determines the extent of vaporization of Ga and Sb and thereby controls the ensemble stoichiometry and reaction rates. K E Y W O R D S aerotaxy, continuous reactor, gallium antimonide, nonthermal plasma, semiconductor nanocrystals

show abstract

Section: Introductionmentioning

confidence: 99%

Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy

Üner

Thimsen

2020

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

“…Some micro- and nano-structures with plant-like morphologies have been reported78910111213. Recently, highly branched flower-shaped structures have attracted attention due to their potential in the fields of magnetic materials, catalysis, optoelectronic devices, solar cells and medicine141516171819.…”

mentioning

confidence: 99%

Complex self-assembly of pyrimido[4,5-d]pyrimidine nucleoside supramolecular structures

Zhao

Guo

et al. 2014

Nat Commun

View full text Add to dashboard Cite

Supramolecular self-assembly is not only one of the chemical roots of biological structure but is also drawing attention in different industrial fields. Here we study the mechanism of the formation of a complex flower-shaped supramolecular structure of pyrimido[4,5-d]pyrimidine nucleosides by dynamic light scattering, scanning electron microscopy, differential scanning calorimetry, nuclear magnetic resonance and X-ray analysis. Upon removing the hydroxyl group of sugars, different flower-shaped superstructures can be produced. These works demonstrate that complex self-assembly can indeed be attained through hierarchical non-covalent interactions of single molecules. Furthermore, chimerical structures built from molecular recognition by these monomers indicate their potential in other fields if combined with other chemical entities.

show abstract

“…The Ga atoms were desorbing from substrate and formed droplets on the sidewall of 1D GaSb NWs with time evolution. Then the GaSb branches grew via self-catalysted VLS mechanism [235]. Similar as the GaP/GaAsP branches, the GaSb branches adopt the incline 111 as growth direction, as shown in Fig.…”

Section: Science China Materialsmentioning

confidence: 89%

“…Interestingly, in the growth of GaSb trees reported by Yan et al [235], no additional deposition of seed particles is necessary. The Ga atoms were desorbing from substrate and formed droplets on the sidewall of 1D GaSb NWs with time evolution.…”

Section: Science China Materialsmentioning

confidence: 95%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

View full text Add to dashboard Cite

introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

show abstract

Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range

Cited by 38 publications

References 31 publications

Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy

Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy

Complex self-assembly of pyrimido[4,5-d]pyrimidine nucleoside supramolecular structures

Growth of III-V semiconductor nanowires and their heterostructures

Contact Info

Product

Resources

About