“…Because such a high temperature is necessary, various materials having low melting point cannot be coated with silicon carbide film. Thus, the development of the low temperature silicon carbide CVD technique (Nakazawa and Suemitsu, 2000;Madapura et al, 1999) will extend and create enormous kinds of applications. For this purpose, the CVD technique using a reactive gas, such as monomethylsilane, is expected.…”