1999
DOI: 10.1149/1.1391745
|View full text |Cite
|
Sign up to set email alerts
|

Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane

Abstract: Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis Si(111) substrates. High growth rates, in excess of 30 μm/h, have been obtained. Growth on carbonized Si(111) substrates produces a smoother surface morphology compared to films grown on noncarbonized substrates. Growth o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

5
48
1

Year Published

2002
2002
2022
2022

Publication Types

Select...
5
1
1

Relationship

1
6

Authors

Journals

citations
Cited by 74 publications
(54 citation statements)
references
References 10 publications
5
48
1
Order By: Relevance
“…Because very large peaks due to the silicon-carbon bond exist near 282 eV and near 100 eV, most of the deposited film is shown to be silicon carbide. This coincides with the fact that the infrared absorption spectrum of this film showed a peak near 793 cm -1 , which corresponds to the silicon-carbon bond (Madapura et al, 1999). Fig.…”
Section: Film Deposition From Monomethylsilanesupporting
confidence: 86%
See 3 more Smart Citations
“…Because very large peaks due to the silicon-carbon bond exist near 282 eV and near 100 eV, most of the deposited film is shown to be silicon carbide. This coincides with the fact that the infrared absorption spectrum of this film showed a peak near 793 cm -1 , which corresponds to the silicon-carbon bond (Madapura et al, 1999). Fig.…”
Section: Film Deposition From Monomethylsilanesupporting
confidence: 86%
“…) shows that the silicon-carbon bond and Si(O, Cl, F) x C y bond exist on the film surface. Because the infrared absorption spectra through the obtained film showed a peak near 793 cm -1 , which corresponded to the silicon-carbon bond (Madapura et al, 1999), most of this film is determined to be silicon carbide. From a small number of silicon-oxygen bonds in Figure 8 (b), some of the silicon-carbon bonds in the remaining intermediate species show that it has oxidized during storage in air.…”
Section: Film Deposition From Monomethylsilane and Hydrogen Chloridementioning
confidence: 99%
See 2 more Smart Citations
“…The SiC-device definition and processing are well established. We have previously reported 5 that the single, organosilaneprecursor trimethylsilane [(CH 3 ) 3 SiH or 3MS] produces excellent 3C-SiC films while being nonpyrophoric, noncorrosive, and easier to handle than the conventional SiH 4 /C 3 H 8 /H 2 gas system used for SiC growth. Our previous results with 3MS show that SiC films grown on Si substrates 6 can be in situ doped with N 2 and that undoped films can be grown successfully on Si 3 N 4 layers 3 on Si substrates.…”
Section: Introductionmentioning
confidence: 99%