Heteroepitaxy of CdTe on tilting Si(211) substrates by molecular beam epitaxy

Wang, Yuanzhang; Lu, Chunmei; Wu, Yan; Wu, Jun; Yu, Meifang; Li, He

doi:10.1016/j.jcrysgro.2006.01.048

Cited by 7 publications

(3 citation statements)

References 15 publications

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“…The decrease in the threading dislocations with increasing thickness of CdTe is due to dislocation cancellation driven by the residual stress. 18,19 In contrast, the CdTe grown on standard (211) Si showed larger values of EPD (a factor of $5) or FWHM. By refining the substrate misorientation as well as the optimal growth conditions, XDRC FWHM values in a range of 50 arcsec to 60 arcsec (corresponding to EPD values of 9 · 10 5 cm -2 to 30 · 10 5 cm -2 ) were routinely obtained on CdTe grown on Si and GaAs.…”

Section: Crystal Qualitymentioning

confidence: 98%

MBE HgCdTe on Alternative Substrates for FPA Applications

Quan

et al. 2008

Journal of Elec Materi

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Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the alternative substrates of GaAs and Si are described. The As passivation on (2 · 1) reconstructed (211) Si and its effects on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified. Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg 1-x Cd x Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As 4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and theoretically by examining the difference of the formation energy of As Hg and As Te . Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed.

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Section: Crystal Qualitymentioning

confidence: 98%

MBE HgCdTe on Alternative Substrates for FPA Applications

Quan

et al. 2008

Journal of Elec Materi

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“…To the present, CdTe compound have been prepared by different techniques, such as hot-wall evaporation [2], RF sputtering [3], molecular beam epitaxy [4], solvothermal process [5] and electrodeposition [6,7]. Most of them are obtained in the form of bulk [8], films, monocrystals and nanocrystals.…”

Section: Introductionmentioning

confidence: 99%

Influence of minor oxidation of the precursor powders to form nanocrystalline CdTe by mechanical alloying

Campos¹,

Ersching²,

Lima³

et al. 2008

Journal of Alloys and Compounds

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“…1. The decrease in the threading dislocations as the increasing thickness of CdTe is due to the dislocation cancellation driven by the residual stress [10,11]. In contrast, the CdTe grown on standard (2 1 1) Si showed larger values of EPD (a factor of $5) or FWHM.…”

Section: Crystal Qualitymentioning

confidence: 98%