Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Merckling, Clément; Waldron, Niamh; Jiang, Shidong; Guo, Weiming; Collaert, N.; Caymax, Matty; Vancoille, E.; Barla, K.; Thean, A.; Heyns, Marc; Vandervorst, Wilfried

doi:10.1063/1.4862044

Cited by 94 publications

(74 citation statements)

References 20 publications

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“…Low defect density growth of GaAs 23 , InP 24,25 and InGaAs 26 compounds using selective area growth on prepatterned (001)-silicon was achieved, leading to the demonstration of the world's first III-V FinFET devices grown on a 300 mm substrate. Here we leverage this process to demonstrate room temperature laser operation of wafer scale integrated InP lasers directly grown on standard (001)-silicon substrates.…”

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confidence: 99%

“…Except for the first 20nm thick dark layer at the InP-Si interface and some stacking faults along the trench originating from the complex growth process, hardly any dislocations can be found in the material. The bottom defective layer is formed during the early stage of the epitaxy process 25 . The well-controlled low temperature nucleation process accommodates the entire lattice mismatch within a few tens of nanometers, allowing for fully relaxed and threading dislocation-free InP growth in the next step.…”

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Room-temperature InP distributed feedback laser array directly grown on silicon

et al. 2015

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These authors contributed equally to this work.Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective cointegration with photonic circuits and III-V FINFET logic.The potential of leveraging well-established and high yield manufacturing processes developed initially by the electronics industry has been the main driver fueling the massive research in silicon photonics over 2 the last decade [1][2][3][4][5][6] . From the start of its development though the lack of efficient optical amplifiers and laser sources monolithically integrated with the silicon platform inhibited the widespread adoption in high-volume applications. Solutions relying on flip-chipping prefabricated laser diodes 7,8 or bonding III-V epitaxial material [9][10][11] are now being deployed in commercially available optical interconnects but are less compatible with standard high-volume and low cost manufacturing processes. Approaches focusing on the engineering of group IV materials have achieved optical gain but still require extensive work to reach room temperature lasing at reasonable efficiency [12][13][14] . Therefore, the monolithic integration of direct bandgap III-V semiconductors, well known to be efficient light emitters, with the silicon photonics platform is heavily investigated. However, considerable hurdles need to be overcome. When directly growing III-V semiconductors on silicon substrates, the large lattice mismatch (εInP/Si = 8.06 %), the difference in thermal expansion and the different polarity of the materials result in large densities of crystalline defects including misfit and threading dislocations, twins, stacking faults and anti-phase boundaries, strongly degrading the performance and reducing the lifetime of any device fabricated in the as-grown layers 15 . Several routes to overcome these issues have been proposed. GaP-related materials can be grown on exact (001) silicon substrates with a small lattice mismatch and pulsed laser oscillation around 980 nm up to 120 K 16 has been achieved but shifting the laser...

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Room-temperature InP distributed feedback laser array directly grown on silicon

et al. 2015

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“…Significant progress has been reported over the last 4-5 years for the integration of Ge channels on Si for enhanced pMOS devices [4][5][6]. However, similar progress for III-V materials has proved to be far more difficult, and only recently has an important breakthrough been reported for integrating device quality III-V materials on 300 mm Si wafers [7,8]. The lattice mismatch with respect to Si (4% for Ge, 8% for InP, 12% for InAs) is an important source similar mechanism for InP dissolution in aqueous HCl solutions based on undissociated HCl [25].…”

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confidence: 99%

Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

et al. 2017

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In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the two acids, attributed to an anisotropy in step edge reactivity. The morphology of the etch pits in bulk InP suggests that the dislocations are oriented mainly perpendicular to the surface. By studying the influence of the acid concentration on the InP fin recess in nanoscale trenches, it was found that aqueous HCl solution was most suitable for revealing defects. Planar defects in InP fin structures grown by the aspect ratio trapping technique could be visualized as characteristic shallow grooves approximately one nanometer deep. It is challenging to reveal defects in wide-field InP fins. In these structures, dislocations also reach the surface next to stack faults or twinning planes. Due to the inclined nature, dislocation-related pits are only a few atomic layers deep. Extending the pits is limited by the high reactivity of the fin sides and the strong surface roughening during etching. The process window for revealing wet-chemical defects in InP fins is limited.

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“…21 , 23 , 24 Figure 5 illustrates InP grown selectively on a 300-mm-diameter Si in nanoscale trenches. 24 These techniques are being advanced in facilities combining growth and nanofabrication capabilities to create metamorphic materials in a deterministic fashion. …”

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confidence: 99%