2011
DOI: 10.1016/j.jcrysgro.2011.04.024
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Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD

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Cited by 17 publications
(16 citation statements)
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“…The electronic energies are determined in this study. [5][6][7][8][9][10][11] Most of these studies showed broad emission bands at ∼600−650 nm (Refs. 3), which is in fairly good agreement with that obtained from the transmittance measurement of bulk SnO 2 (∼3.5 eV at 300 K).…”
Section: Discussionmentioning
confidence: 99%
“…The electronic energies are determined in this study. [5][6][7][8][9][10][11] Most of these studies showed broad emission bands at ∼600−650 nm (Refs. 3), which is in fairly good agreement with that obtained from the transmittance measurement of bulk SnO 2 (∼3.5 eV at 300 K).…”
Section: Discussionmentioning
confidence: 99%
“…For epitaxial growth of SnO 2 films, several deposition techniques have been employed, including sputtering [16], atomic layer deposition (ALD) [17][18][19], pulsed laser deposition (PLD) [20,21], molecular beam epitaxy (MBE) [22,23], and metal organic chemical vapor deposition (MOCVD) [24], and the commonly used substrates are sapphire, TiO 2 , and SrTiO 3 single crystals [16][17][18][19][20][21][22][23][24]. However, most of the deposited films were the conventional rutile SnO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…Tin dioxide (SnO 2 ) is a direct forbidden band gap [5] oxide semiconductor with unique intrinsic material properties, which include wide band gap (~ 4 eV) [6][7][8][9][10], high exciton binding energy (~ 130 meV) and high carrier mobility (~ 250 cm 2 V -1 s -1 ) at room temperature [11]. In addition, SnO 2 is a relatively low-cost material because it does not contain minor metals such as gallium.…”
mentioning
confidence: 99%
“…In addition, SnO 2 is a relatively low-cost material because it does not contain minor metals such as gallium. In order to obtain high crystallographic properties of SnO 2 , the growth of single crystalline SnO 2 require relatively expensive film formation methods such as metalorganic chemical vapour deposition (MOCVD) [10] or molecular beam epitaxy (MBE) [12,13], which needs vacuum equipment. One alternative approach is a mist chemical vapour deposition (mist-CVD), which can form various oxide semiconductors under atmospheric pressure with a simple and less expensive technique [9,[14][15][16][17][18][19].…”
mentioning
confidence: 99%
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