2006
DOI: 10.1109/lpt.2005.861542
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Heterogeneous integration of microdisk lasers on silicon strip waveguides for optical interconnects

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Cited by 66 publications
(42 citation statements)
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“…Heterogeneous integration of III-V material (active functions) and SOI (passive functions) could be a viable solution [15].…”
Section: A Rationalementioning
confidence: 99%
“…Heterogeneous integration of III-V material (active functions) and SOI (passive functions) could be a viable solution [15].…”
Section: A Rationalementioning
confidence: 99%
“…Based on the concept of vertical coupling via evanescent coupling (originally proposed and demonstrated in the context of III-V microdisk lasers stacked on another III-V bus waveguide [87]), the mentioned French research groups managed to couple light from optically-pumped microdisk lasers into silicon strip waveguides by decreasing the total SiO 2 -SiO 2 hydrophilic surfaces from 800 nm down to 300 nm [88].…”
Section: Iii-v Lasers On Siliconmentioning
confidence: 99%
“…However, integrating lasers on fully-processed CMOS wafers presents additional challenges as the silicon bonding surfaces are buried underneath up to ten layers of electrical interconnects. One approach is to build electrical interconnects and photonic circuits on separate Si wafers, bond the Si wafers, and then use flip-chip bonding to secure the III-V semiconductor materials on the Si wafers (Hattori et al, 2006). Another method to avoid any wafer bonding steps and enable simultaneous heterogeneous integration is an post-CMOS, optofluidic assembly process using LOET.…”
Section: Microdisk Laser Assembly On Siliconmentioning
confidence: 99%