Heterostructure laser-transistors controlled by resonant-tunnelling electron extraction

Abstract

Three-terminal laser-transistors with a quantum well active region and a resonant-tunnelling collector are proposed and considered. It is shown that the laser-transistor is controlled by the collector voltage due to electron extraction via the resonant-tunnelling structure. The current-voltage and light-voltage characteristics are calculated. Both of them reflect effective voltage control and possible bistable behaviour of the laser-transistor in a certain range of the collector voltage. The electron heating due to electron injection and extraction can significantly affect the controllability and bistability of the laser-transistor.

Thermionic and tunneling transport mechanisms in graphene field‐effect transistors

“…) for the active region under consideration in the weak nonlocality approximation [14][15][16]. This equation provides solutions, which can be obtained from the exact solution of the two-dimensional Poisson by the expansion in powers of the parameter…”

Tunneling Current–Voltage Characteristics of Graphene Field-Effect Transistor

“…Equation (2), which governs the electric potential, ϕ = ϕ(x) = ψ(x, 0), in the channel is a consequence of the two-dimensional Poisson equation for the electric potential ψ = ψ(x, z) for the active region under consideration in the weak nonlocality approximation [12,13]. This equation provides solutions, which can be obtained from the exact solution of the two-dimensional Poisson by the expansion in powers of the parameter δ = [(W…”

“…The weak nonlocality approximation was effectively used previously in some previous papers (see, for instance, Refs. [10,12,13,16]). …”

“…II, the GNR-FET model is considered and the main equation governing the spatial distributions of the electric potential in the active region of the transistor channel is given. This equation is a consequence of the two-dimensional Poisson equation in the weak nonlocality approximation [10,12,13]. Section III deals with the derivation of the relations between the electron and hole densities in the channel and the electric potential and the consequent calculations of the potential spatial distributions depending on the drain and gate (back gate and top gate) voltages.…”

Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures

“…The RT resonance form-factor is approximated as (z) = (1 + z 2 ) −1 (see, for example ref. 21). Equation (3) is a consequence of the Poisson equation 22) in the so-called weak nonlocality approximation.…”