Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures

Ryzhii, V.; Shur, M. S.

doi:10.1143/jjap.40.546

Cited by 31 publications

(27 citation statements)

References 25 publications

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“…1 and 2͒. This topic has been extensively studied in a number of theoretical [3][4][5][6][7][8][9][10][11][12][13] and experimental 14 -19 articles. The plasma oscillations in the gated 2D channel, which are the oscillations of the electron concentration in the 2D channel and the electric potential under the gate, have the spectrum similar to the spectrum of the gravity oscillations of the liquid with unbound surface in a shallow channel.…”

Section: Introductionmentioning

confidence: 99%

Admittance of a slot diode with a two-dimensional electron channel

Ryzhii

Satou

Shur

2003

Journal of Applied Physics

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We calculate the frequency-dependent admittance of a diode with a two-dimensional electron channel in a slot between strip-like contacts. Hydrodynamic electron transport equations coupled with a two-dimensional Poisson equation for the self-consistent electric potential are used. Using the calculated expression for the admittance, we analyze the effect of the planar contacts and external capacitance on the plasma oscillations in the system under consideration. The obtained results are useful for the interpretation of experimental observation of plasma effects in high-electron mobility transistors and optimization of terahertz devices based on these transistors.

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Section: Introductionmentioning

confidence: 99%

Admittance of a slot diode with a two-dimensional electron channel

Ryzhii

Satou

Shur

2003

Journal of Applied Physics

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“…[8][9][10] However, the fabrication of high oscillation RTD Oscillator is still a difficult challenge. [11][12][13] Ryzhii et al proposed that THz emission could be possible in high electron mobility transistors (HEMTs) with gates exhibiting NDC. 14 Sensale-Rodriguez demonstrated the possibilities of power gain in RTD-gated HEMTs at THz frequencies 15,16 and proposed that the THz plasma wave in graphene-insulator-graphene structure could be seen as active transmission line.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

et al. 2018

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In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT). The plasma wave arising from the RTD-gated HEMT is equivalent to active transmission lines and induces negative differential conductance (NDC) of the oscillator. The proposed RTD-gated HEMT oscillator is more compact and has higher oscillation frequency than the transmission line loaded traditional RTD oscillator duo to plasma wave effect. This paper analyses and calculates the oscillation conditions, the relationships between device structures, oscillation frequency and the output power of the oscillator. The presented work may provide a new concept for fabricating terahertz oscillator.

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“…1. These hydrodynamic equations [11][12][13][14] model electron drift in HEMT channels as plasma waves. The latter can then be used to explain the increased gain amplification.…”

Section: Introductionmentioning

confidence: 99%

Full-wave modeling of THz RTD-gated GaN HEMTs

Tenneti

Nahar

Volakis

2015

Infrared Physics & Technology

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Modeling transistors at terahertz frequencies is challenging, because electromagnetic and quantum effects that are negligible in lower frequencies become limiting factors in device performance. Though previous work has focused on modeling the channel of a high-electron mobility transistor (HEMT) using hydrodynamic equations, a more complete toolset is needed to describe submillimeter-wave device gain performance. This paper introduces a simulator that couples fullwave Maxwell's equations with Schrodinger-based charge transport equations, and is used to evaluate the gain performance of a GaN HEMT at THz. This novel simulator is also used to evaluate the effect on gain when a resonant tunneling diode (RTD) is integrated with a HEMT. Upon validation with published work, we state the feasibility of RTD-gated GaN HEMT structures that have resonances up to 2.3 THz and gain up to 6 dB.

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Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures

Cited by 31 publications

References 25 publications

Admittance of a slot diode with a two-dimensional electron channel

Admittance of a slot diode with a two-dimensional electron channel

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

Full-wave modeling of THz RTD-gated GaN HEMTs

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